Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-29T07:35:17.673Z Has data issue: false hasContentIssue false
  • English
  • Français

The Valence Band Tail Density of States and Bond Angle Distortion in a-SiNx: H Alloys

Published online by Cambridge University Press:  10 February 2011

B. G. Budaguan ,
A. A. Aivazov  and
D. A Stryahilev
B. G. Budaguan
Affiliation:
Department of Microtechnology, Moscow Institute of Electronic Technology, 103498, Moscow, K-498, Russia
A. A. Aivazov
Affiliation:
Department of Microtechnology, Moscow Institute of Electronic Technology, 103498, Moscow, K-498, Russia
D. A Stryahilev
Affiliation:
Department of Microtechnology, Moscow Institute of Electronic Technology, 103498, Moscow, K-498, Russia
Get access

Abstract

Films of a-SiNx:H with x = 0.0..0.62 were deposited by glow discharge decomposition of (10% SiH4+90%/H2 )+ NH3 mixture. The chemical bonding and composition of films were investigated with using of infrared spectroscopy. The deformation energy per Si atom connected to bond bending Vkθ was calculated from data of Raman scattering. Characteristic energy of valence band tail (VBT) states distribution, E0v, were determined fromrsubgap absorption spectra. The dependencies of E0v and Vkθ on film composition, x, were considered in order to estimate the influence of the bond angle disorder on the distribution of VBT states.

The essential difference in behavior of E0v and Vkθ dependencies on x was found for Si-rich (x<0. 15) alloys. When Vkθ value increase with x, the E0v parameter stays almost constant; while at x>0. 15 the E0v increase with x as well as the VKO. It means that bond angle disorder in the bulk of the material contributes to VBT characteristic energy, but it is not the only source. Another factors as it was shown may be connected with valence states of Si atoms, localized near inner boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 59
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Dyre, J.C., Phys. Rev. Lett., 58, p.792 (1987)Google Scholar
2. Abe, S., Toyozawa, Y., J. Phys. Soc. Jpn., 50, p.2185 (1981)Google Scholar
3. Economou, E.N., Bacalis, N., Cohen, M.H., J. Non-Cryst. Solids, 97/98, p.101 (1987)Google Scholar
4. Bar-Yam, Y., Adler, D., Joannopoulos, J.D., Phys. Rev. Lett., 57, p.467 (1986)Google Scholar
5. Singh, J., Phys. Rev. B 23, p.4156 (1981)Google Scholar
6. Tanaka, K., Tsu, R., Phys. Rev., B 24, p.2038 (1981)Google Scholar
7. Wong, C.K, Lucovsky, G., MRS Symp. Proc., 70, p.77 (1986)Google Scholar
8. Maley, N., Beeman, D., Lannin, J.C., Phys. Rev., B 38, p. 10611 (1988)Google Scholar
9. Smith, Z., Aljishi, S., Wagner, S., J. Non-Cryst. Solids, 97/98, p.775 (1987)Google Scholar
10. Morimoto, A. et al, Solid State Commun., 47, p.773 (1983)Google Scholar
11. Bustarret, E., Morgado, E. Solid State Communications, 63, p.581 (1987)Google Scholar
12. Hasegawa, S., Matuura, M., Y. Kurata Appl. Phys. Lett., 58, p.741(1991)Google Scholar
13. Shimizu, T., Kidoh, H., Morimoto, A., Kumeda, M., Jpn. J. Appl. Phys., 28, p.586 (1989)Google Scholar
14. Meaudre, R, Mezhoudi, A. Phil. Mag, B50, L63 (1984)Google Scholar
15. Bustarret, E, J ofNon-Cryst. Solids, 114, p. 13 (1989)Google Scholar
16. Bustarret, E., Bensouda, M., Habrard, M.C, Bruyere, J.C., Pouln, S., Gujrathi, S.C., Phys. Rev., B38, p 8171 (1988)Google Scholar
17. Vanecek, M., Abraham, A., Stica, O., Stuchlik, J., Kocka, J., Phys. Stat. Sol. (a), 83, p. 617 (1984)Google Scholar
18. Beeman, D., Tsu, R, Thorpe, M.F., Phys. Rev., B 32, p. 874 (1984)Google Scholar
19. Klimov, G.P., Kuzmin, A.D., “Veroyatnost, processy, statistika. Zadachi s resheniyami.” (Probability, processes, statistics. Problems with solutions. ). Publishing house of Moscow University. 1985, pp. 76;.88–90.Google Scholar
20. Keating, P.R., Phys. Rev. 145, p.637 (1966)Google Scholar
21. Hasegawa, S., He, L., Amano, Y., Inokuma, T., Phys. Rev., B48, p.5315 (1993)Google Scholar
22. Lucovsky, G., Williams, M.J., Cho, S.M., Jing, Z., Whitten, J.L. MRS Symp. Proc. 336, p.275 Google Scholar
23. Budaguan, B.G., Aivazov, A. A., Stryahilev, D.A and Kudoyarova, V.Kh., Semiconductors 28, p.781 (1994)Google Scholar
24. Schubert, M.B., Mohring, H.-D., Bauer, G.H., J. Non-Cryst. Solids, 137/138, p.275 (1991)Google Scholar
25. Budaguan, B.G., Aivazov, A.A., Stryahilev, D.A. (in press)Google Scholar
26. Robertson, J., Phil. Mag, B 69, 307 (1994)Google Scholar