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Valence Band Discontinuity at and Near The SiO2/Si(111) Interface
Published online by Cambridge University Press: 10 February 2011
Abstract
The changes in X-ray excited valence band of silicon oxide during progressive oxidation of Si(111) surface in 1 Torr dry oxygen at 600–850°C were studied. Following results are obtained: 1) energy level of top of valence band within 0.9 nm from the SiO2/Si interface is different from that of bulk silicon oxide by about 0.2 eV, 2) valence band discontinuity at the interface changes periodically with the interface structures.
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