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UV Laser-Induced Metal Deposition on Semiconductors From Electroplating Solutions

Published online by Cambridge University Press:  28 February 2011

Joseph Zahavi  and
Pehr E. Pehrsson
Joseph Zahavi
Affiliation:
Israel Institute of Metals, Technion City, Haifa 32000, Israel.
Pehr E. Pehrsson
Affiliation:
Electronics Technology Division, Naval Research Lab., Washington, D.C. 20375-5000, U.S.A. NRL-NRC Postdoctoral Fellow.
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Abstract

We have demonstrated metal deposition on semiconductors immersed in electroplating solution by exposure to UV laser radiation. N-type β-SiC and Si in gold or Pd/Ni electroplating solutions were exposed to 20 ns pulses of 193 nm or 248 nm excimer laser radiation. The energy per pulse was 20–100 mJ. Au and Pd/Ni metallizations deposited in lines and circles on SiC showed leaky Schottky barrier I-V characteristics. The thickness increased with increasing pulse energy or number. Both masked and maskless deposition were demonstrated without apparent damage to the substrate. Details of the process, potential mechanisms, and sample characterization are discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 173
Copyright
Copyright © Materials Research Society 1987

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References

1. Tamir, S., Zahavi, J., J. Vac. Sci. Tech. A, 3 (6), 2312, (1985).Google Scholar
2. von Gutfeld, R.J., Tynan, E.E., et al., Appl.Phys.Lett., 35, (9),651 (1979).Google Scholar
3. Podlesnik, D.V., Gilgen, H.H., et al., J. Opt. Soc. Am. B., 3, (5), 775 (1986).Google Scholar
4. Wood, R.F., Lowndes, D.H., Crys. Latt. Dwf. and Amor. Mat., 12, 475 (1986).Google Scholar
5. Makarov, V.V., Tuomi, T., et al., Appl. Phys. Lett., 35, (12), 922 (1979).Google Scholar
6. Pehrsson, P.E., Manuscript in preparation.Google Scholar
7. Mizokawa, Y., Geib, K.M., Wilmsaen, C.W., J. Vac. Sci. Tech. A, 4, (3), 1696 (1986).Google Scholar
8. Kaplan, R., Parrill, T.M., Surf. Sci. 165, L45 (1986).Google Scholar
9. Narayan, J., Fathy, D., Holland, O.W., Appleton, B.R., Mat. Lett., 3 (7,8), 261, (1985).Google Scholar
10. Hiraki, A., Shuto, K., et al., Appl. Phys. Lett., 34 (9), 611 (1977). 178Google Scholar
11. Bermudez, V.M., Appl. of Surf. Sci., 17, 12 (1983).CrossRefGoogle Scholar
12. Gurevich, Y.Y., Pleskov, Y.V., Rotenburg, Z.A., Photoelectrochemistry, translated by Wroblowa, H.S., (Consultants Bureau, N.Y., 1980).CrossRefGoogle Scholar
13. Zahavi, J., Tamir, S. and Halliwell, M., Plating, J. and Surface Finishing, pp. 57–64, February 1986. J. Zahavi, S. Tamir and M. Halliwell, In Materials Issues in Silicon Integrated Circuit Processing edited by Wittmer, J. StimmeI, M. Strathman (Material Research Society, Pittsburgh, Pennsylvania, 1986), p. 387.Google Scholar