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Utilization of a-Si:H Switching Diodes for Signal Readout from a-Si:H Pixel Detectors

Published online by Cambridge University Press:  01 January 1993

Gyuseong Cho
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA , 94720
J.S. Drewery
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA , 94720
W.S. Hong
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA , 94720
T. Jing
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA , 94720
H. Lee
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA , 94720
S.N. Kaplan
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA , 94720
A. Mireshghi
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA , 94720
V. Perez-Mendez
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA , 94720
D. Wildermuth
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA , 94720
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Abstract

Two-dimensional arrays of amorphous silicon photodiodes can be used as position-sensitive radiation detectors when they are coupled to an appropriate phosphor. We have developed signal readout schemes from amorphous silicon photodiode arrays utilizing one or two switching diodes attached to each pixel photodiode. Individual cells and prototype arrays of amorphous silicon photodiodes with single- and double-diode switching readout were fabricated and tested. A charge storage time and a readout time were measured. The measurement results were analyzed by simple circuit theory.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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