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Utilization of Amorphous Silicon Carbide (a-Si:C:H) as a Resistive Layer in Gas Microstrip Detectors

Published online by Cambridge University Press:  15 February 2011

W. S. Hong ,
H. S. Cho ,
V. Perez-Mendez  and
W. G. Gong
W. S. Hong
Affiliation:
Physics Division, Nuclear Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
H. S. Cho
Affiliation:
Physics Division, Nuclear Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
V. Perez-Mendez
Affiliation:
Physics Division, Nuclear Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
W. G. Gong
Affiliation:
Nuclear Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
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Abstract

Thin semiconducting films of hydrogenated amorphous silicon (a-Si:H) and its carbon alloy (a-Si:C:H) were applied to gas microstrip detectors in order to control gain instabilities due to charges on the substrate. Thin (∼100 nm) layers of a-Si:H or p-doped a-Si:C:H were placed either over or under the electrodes using the plasma enhanced chemical vapor deposition (PECVD) technique to provide the substrate with a suitable surface conductivity. By changing the carbon content and boron doping density, the sheet resistance of the a-Si:C:H coating could be successfully controlled in the range of 1012 ∼ 1017 μ/□, and the light sensitivity, which causes the resistivity to vary with ambient light conditions, was minimized. An avalanche gain of 5000 and energy resolution of 20% FWHM were achieved and the gain remained constant over a week of operation. A-Si:C:H film is an attractive alternative to ion-implanted or semiconducting glass due to the wide range of resistivities possible and the feasibility of making deposits over a large area at low cost.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 523
Copyright
Copyright © Materials Research Society 1995

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References

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