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Using Zeolites as Substrates for Diamond Thin Film Deposition

Published online by Cambridge University Press:  15 February 2011

Michael C. Kwan  and
Karen K. Gleason
Michael C. Kwan
Affiliation:
Massachusetts Institute of Technology, Department of Chemical Engineering, 66–462, Cambridge, MA, 02139
Karen K. Gleason
Affiliation:
Massachusetts Institute of Technology, Department of Chemical Engineering, 66–462, Cambridge, MA, 02139
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Abstract

Zeolites have been used as a potential substrate for CVD diamond deposition. By saturating the pore channels of a silicalite crystal, which are spaced approximately 10 Å apart, with hydrocarbon seeds to induce and control nucleation, films have been grown in a hot filament chemical vapor deposition (HFCVD) system under standard deposition conditions, using acetone as the carbon source. The hydrocarbons used were adamantane, naphthalene, anthracene, 2,3-benzanthracene, and l,2:5,6-dibenzanthracene. To enhance nucleation, a high pressure pre-deposition period was used initially.

Characterization of these films through electron diffraction and Auger electron spectroscopy indicates that polycrystalline β-SiC imbedded in an amorphous matrix is initially formed and large, well faceted diamond crystals are subsequently nucleated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 523
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Geis, M. W., Smith, H. I., Argoitia, A., Angus, J., Ma, G.-H. M., Glass, J. T., Butler, J., Robinson, C. J., and Pryor, R., Appl. Phys. Lett., 58 (22), 2485 (1991).Google Scholar
2. Spitzl, R., Raiko, V., and Engemann, J., presented at the 4th European Conference on Diamond, Diamond-like and Related Materials, Albufeira and Algarve, Portugal, 1993 (unpublished).Google Scholar
3. Wild, C., Koidl, P., Herres, N., Miiller-Sebert, W., and Eckermann, T., Electrochem. Soc. Proc., 91–8, 224 (1991).Google Scholar
4. Wild, C., Koidl, P., Miiller-Sebert, W., Walcher, H., Kohl, R., Herres, N., and Locher, R., Dia. Rel. Mat., 2, 158 (1993).Google Scholar
5. Matsumoto, S., and Matsui, Y., J. Mat. Sci., 18, 1785 (1983).Google Scholar
6. Angus, J. C., Li, Z., Sundara, M., Gat, R., Anderson, A. B., Mehandru, S. P., and Geis, M. W. in 2nd International Symposium on Diamond and Diamond Materials, vol. 91–8, 125, (1991).Google Scholar
7. Li, Z., Wang, L., Suzuki, T., Argoitia, A., Pirouz, P., and Angus, J. C., J. Appl. Phys., 73 (2), 711 (1993).Google Scholar
8. Kaplan, R., J. Appl. Phys., 56 (6), 1636 (1984).Google Scholar