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Using Rapid Thermal Processing to Induce Epitaxial Alignment of Polycrystalline Silicon Films on (100) Silicon

Published online by Cambridge University Press:  28 February 2011

H.B. Harrison ,
S.T. Johnson ,
Y. Komem ,
C. Wong  and
S. Cohen
H.B. Harrison
Affiliation:
Royal Melbourne Institute of Technology, Melbourne, Australia3000
S.T. Johnson
Affiliation:
Royal Melbourne Institute of Technology, Melbourne, Australia3000
Y. Komem
Affiliation:
Department of Materials Engineering, Technion, Hafia, Israel
C. Wong
Affiliation:
I.B.M., T.J. Watson Research Centre, Yorktown Heights, New York, U.S.A
S. Cohen
Affiliation:
I.B.M., T.J. Watson Research Centre, Yorktown Heights, New York, U.S.A
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Abstract

Undoped polycrystalline silicon (poly-Si) films obtained by low pressure chemical vapour deposition (LPCVD) techniques have previously been demonstrated to align epitaxially with respect to the underlying (100) silicon substrate in the 1000-1100°C temperature regime. However the alignment rate at temperatures in excess of 1100°C is too rapid to be obtained by conventional furnace processing. Rapid Thermal Processing (RTP) offers an excellent technique of attaining this temperature in the requisite time and in this paper we report on the results of a study in which RTP has been used. Our results show an activation energy of ∼4.5eV, and that the growth rate constant is dramatically enhanced, without any alignment delay in the initial heat treatment phase, which is contrary to previous findings.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 455
Copyright
Copyright © Materials Research Society 1986

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References

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