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Using Rapid Thermal Annealing to Improve Epitaxial CaF2/CoSi2/Si(111) Structures

Published online by Cambridge University Press:  25 February 2011

Julia M. Phillips  and
W. M. Augustyniak
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
W. M. Augustyniak
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
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Abstract

We have extended our studies of epitaxial insulator-metal-semiconductor heterostructures composed of CaF2 and CoSi2 layers grown on Si(111) substrates to cover a broader range of growth conditions. We find that rapid thermal annealing plays a crucial role in optimizing the epitaxial quality of the CaF2 layer over the entire range of conditions studied. The chemical stability of the fluoride layer is also enhanced by the annealing process.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 115
Copyright
Copyright © Materials Research Society 1986

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References

1. Phillips, J. M., Mat. Res. Soc. Symp. Proc. 37, 144 (1985) and references therein.Google Scholar
2. Tung, R. T., Mat. Res. Soc. Symp. Proc. 37, 345 (1985) and references therein.Google Scholar
3. Phillips, J. M. and Augustyniak, W. M., Appl. Phys. Lett. 48, 463 (1986).CrossRefGoogle Scholar
4. Pfeiffer, L., Phillips, J. M., Smith, T. P. III, Augustyniak, W. M., and West, K. W., Appl. Phys. Lett. 46, 947 (1985).Google Scholar
5. Phillips, J. M., Manger, M. L., Pfieffer, L., Joy, D. C., Smith, T. P. III, Augustyniak, W. M., and West, K. W., Mat. Res. Soc. Symp. Proc. (in press).Google Scholar