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Using Quantitative TEM Analysis of Implant Damage to Study Surface Recombination Velocity in Silicon

Published online by Cambridge University Press:  01 February 2011

Jennifer Lee Gasky ,
Sophya Morghem  and
Kevin Jones
Jennifer Lee Gasky
Affiliation:
[email protected], University of Florida, Dept. of Materials Science and Eng., 100 Rhines Hall, P.O. Box 116400, Gainesville, FL, 32611-6400, United States
Sophya Morghem
Affiliation:
[email protected], University of Florida, Materials Science and Engineering, 100 Rhines Hall, P.O. Box 116400, Gainesville, FL, 32611-6400, United States
Kevin Jones
Affiliation:
[email protected], University of Florida, Materials Science and Engineering, 100 Rhines Hall, P.O. Box 116400, Gainesville, FL, 32611-6400, United States
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Abstract

Silicon wafers with shallow trench isolation structures 3700Å deep were self-implanted with silicon at 40keV, and a dose of 1E15/cm2. This produced an amorphous layer 1000Å deep. The samples were subsequently annealed at temperatures ranging from 750°C to 900°C. The excess interstitials can recombine at the “surface” created by the proximity to the trench sidewall. Plan-view TEM was used to quantify the dislocation distribution as a function of distance from the trench sidewall. It was found that there was no measurable change in defect density as a function of distance from the trench. This was true for both the 20 minute isochronal anneal, and the isothermal study 750°C. This suggests there is a relatively weak recombination of interstitials at the surface. This is surprising given most of the TCAD models assume a very fast surface recombination velocity.

Keywords

electronic materialSitransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 913: Symposium D – Transistor Scaling – Methods, Materials and Modeling , 2006 , 0913-D05-01
Copyright
Copyright © Materials Research Society 2006

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