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Using Electron Cyclotron Resonance Plasma for Depositing Epitaxial Titanium Nitride Thin Films

Published online by Cambridge University Press:  21 February 2011

I.H. Murzin ,
N. Hayashi  and
I. Sakamoto
I.H. Murzin
Affiliation:
Structured Materials Industries, Inc., 120 Centennial Ave., Piscataway, NJ 08854, [email protected]
N. Hayashi
Affiliation:
Electrotechnical Laboratory, Applied Radiation Physics Section, 1-1-4 Umezono, Tsukuba, Ibaraki, 305 Japan
I. Sakamoto
Affiliation:
Electrotechnical Laboratory, Applied Radiation Physics Section, 1-1-4 Umezono, Tsukuba, Ibaraki, 305 Japan
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Abstract

We have employed a 2.45 GHz electron cyclotron resonance (ECR) plasma source to deposit single-crystal thin films of titanium nitride onto MgO substrates of (100) orientation. During deposition the ECR plasma beam delivering a mixture of excited species of molecular and atomic nitrogen ions, strikes a substrate while an electron beam deposits on the same substrate species of titanium. We have studied the formation of films at substrate temperatures of 200, 400, and 600°C, as well as at room temperature. X-Ray diffraction (XRD) revealed that a cubic Bl phase of titanium nitride forms predominantly at all the temperatures explored. Both channeling and Rutherford backscattering spectroscopy (RBS) showed epitaxial layers forming at the temperature as low as 400°C. The minimum relative backscattering yield, χmin decreased as the temperature increased, with the best result of 7.3% obtained for the film deposited at 600°C. Biasing the substrates with either negative or positive voltage at room temperature directly affects film crystallography.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 527
Copyright
Copyright © Materials Research Society 1996

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