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Using Dx Centers to Write Erasable Metallic Patterns in AlGaAs

Published online by Cambridge University Press:  16 February 2011

Tineke Thio
Affiliation:
NEC Research Institute, 4 Independence Way, Princeton NJ 08540
R.A. Linke
Affiliation:
NEC Research Institute, 4 Independence Way, Princeton NJ 08540
G.E. Devlin
Affiliation:
NEC Research Institute, 4 Independence Way, Princeton NJ 08540
J.W. Bennett
Affiliation:
NEC Research Institute, 4 Independence Way, Princeton NJ 08540
J.D. Chadi
Affiliation:
NEC Research Institute, 4 Independence Way, Princeton NJ 08540
R.L. Macdonald
Affiliation:
NEC Research Institute, 4 Independence Way, Princeton NJ 08540
M. Mizuta
Affiliation:
Fundamental Research Laboratories, NEC Corp., Tsukuba, Ibaraki 305, Japan
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Abstract

DX centers are semiconductor dopants which form deep states due to a large lattice relaxation. At low temperature, the DX centers exhibit persistent photoconductivity. When exposed to light in a spatial pattern, the photocarriers are confined to the illuminated regions by Coulomb interaction with the localised DX centers. The resulting spatial modulation of the free carrier density gives rise to a modulation of both the electrical conductivity and the dielectric constant. We demonstrate both effects by measurements of the conductance anisotropy and optical diffraction of samples exposed to excitation in a striped pattern. Erasure is achieved by thermal annealing. The constrast ratio of the conductivity modulation is greater than 108; in our experiment it is limited to ∼100 by light scattering. We estimate that 100nm resolution is feasible. Optical diffraction efficiencies up to 40% have been demonstrated in a stripe-illuminated thick sample. The persistence of the written patterns at low temperature is potentially useful in high-density data storage applications and the fabrication of erasable submicron devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

references

1Mooney, P.M., J. Appl. Phys. 67, R1 (1990).Google Scholar
2Lang, D.V. and Logan, R.A., Phys. Rev. Lett. 39, 635 (1977).Google Scholar
3Chadi, D.J. and Chang, K.J., Phys. Rev. Lett. 61, 873 (1988).Google Scholar
4Thio, T. et al. , Appl. Phys. Lett. 65, 1802 (1994).Google Scholar
5Linke, R.A. et al. , Appl. Phys. Lett. 65, 16 (1994).Google Scholar
6Mizuta, M. andMori, K., Phys.Rev. B 37, 1043 (1988).Google Scholar
7Montgomery, H.C., J. Appl. Phys. 42, 2971 (1971).Google Scholar
8Linke, R.A. et al. , unpublished.Google Scholar
9Hong, J. et al. , Optics Lett. 15, 334 (1990).Google Scholar
10MacDonald, R.L. et al. , accepted for publication in Optics Lett. (1995).Google Scholar
11Psaltis, D. et al. , Appl. Opt. 27, 1752 (1988).Google Scholar
12Betzig, E. et al. , Appl. Phys. Lett. 61, 142 (1992).Google Scholar
13Khachaturyan, K. et al. , Phys. Rev. B 40, 6304 (1989); J.W. Bennett et al., unpublished.Google Scholar
14Semaltianos, N.G. et al. , Phys. Rev. B 47, 12540 (1993).Google Scholar