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The Use of Tertiarybutylphosphine and Tertiarybutylarsine for the Metalorganic Molecular Beam Epitaxial Growth of Resonant Tunneung Devices

Published online by Cambridge University Press:  26 February 2011

E. A. Beam III  and
A. C. Seabaugh
E. A. Beam III
Affiliation:
Texas Instalments Incorporated, Central Research Laboratories, M/S 147, Dallas, TX 75265, USA
A. C. Seabaugh
Affiliation:
Texas Instalments Incorporated, Central Research Laboratories, M/S 147, Dallas, TX 75265, USA
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Abstract

We report on the use of thermally-cracked tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBA) with elemental Ga, In, and Al sources for the MOMBE growth of InP-based resonant tunneling diode (RTD) and resonant tunneling bipolar transistor (RTBT) structures. We have systematically examined the effects of growth conditions and heterostructure modifications on the InP/lnGaAs RTD including the use of pseudomorphic (InGa)P barriers and, in addition, explored for the first time, InP quantum well RTDs using both AlAs and InGaP barriers. Cross-sectional transmission electron microscopy has been used to correlate the structural quality with the electrical characteristics for both lattice-matched and pseudomorphic layers composed of InAs, AlAs, and InGaP. We also demonstrate the first use of mixed InP/lnGaAs and AlAs/lnGaAs heterojunctions in the RTBT. These transistors exhibit room temperature negative transconductance and a peak-to-valley current ratio of 35, the highest yet observed In the RTBT.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 33
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Bate, R. T., Nanotechnol., 1, 1 (1990).Google Scholar
[2] Lee, C. D. and Forrest, S. R., Appl. Phys. Lett, 57, 469 (1990).Google Scholar
[3] Kim, T. S., Bayraktaroglu, B., Henderson, T. S. and Plumton, D. L., Appl. Phys. Lett., 58, 1997 (1991).Google Scholar
[4] Lum, R. M., Klingert, J. K. and Lamont, M. G., Appl. Phys. Lett., 50, 284 (1987).CrossRefGoogle Scholar
[5] Kellert, F. G., Whelan, J. S. and Chan, K. T., J. Electronic Mat., 18, 355 (1989).Google Scholar
[6] Ritter, D., Panish, M. B., Hamm, R. A., Gershoni, D. and Brener, I., Appl. Phys. Lett., 56, 1548 (1990).Google Scholar
[7] Beam III, E. A., Henderson, T. S., Seabaugh, A. C. and Yang, J. Y., accepted to J. of Crystal Growth.Google Scholar
[8] Razeghi, M., Tadella, A., Davies, R. A., Long, A. P., Kelly, M. J., Britton, E., Boothroyd, C., and Stobbs, W. M., Electronics Lett., 23, 117 (1987).Google Scholar
[9] Vuong, T. H. H., Tsui, D. C., and Tsang, W. T., Appl. Phys. Lett., 50, 1004 (1987).Google Scholar
[10] Broekaert, T. P. E., Lee, W., and Fonstad, C. G., Appl. Phys. Lett., 53, 1545 (1988).CrossRefGoogle Scholar
[11] Seabaugh, A. C., Kao, Y. C., Randall, J. N., Frensley, W. R. and Khatibzadeh, M. A., Jpn. J. Appl. Phys., (1991).Google Scholar
[12]G Capasso, F., Sen, S., and Bertram, F., High Speed Semiconductor Devices, ed. by Sze, S. M. (John Wiley & Sons, NY 1990), 465.Google Scholar
[13] Luscombe, J. H. and Frensley, W. R., Nanotechnol., 1, 131, (1990).Google Scholar
[14] Capasso, F., Sen, S., Cho, A. Y., and Sivco, D. L., Appl. Phys. Lett. 53, 1056 (1988).CrossRefGoogle Scholar
[15] Lunardi, L. M., Sen, S., Capasso, F., Smith, P. R., Sivco, D. L., and Cho, A. Y.., IEEE Electron Dev. Lett. 10, 219 (1989).Google Scholar