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The Use of BaF2 Buffer Layers for the Sputter-Deposition of Ticabacuo Thin-Film Superconductors

Published online by Cambridge University Press:  28 February 2011

K.M. Hubbard ,
P.N. Arendt ,
D.R. Brown ,
D.W. Cooke ,
N.E. Elliott ,
J.D. Fan ,
M. Nastasi ,
K.C. Ott ,
E.J. Peterson  and
G.A. Reeves
K.M. Hubbard
Affiliation:
Materials Science and Technology Division
P.N. Arendt
Affiliation:
Materials Science and Technology Division
D.R. Brown
Affiliation:
Mechanical and Electronic Engineering Division
D.W. Cooke
Affiliation:
Medium-Energy Physics Facility
N.E. Elliott
Affiliation:
Materials Science and Technology Division
J.D. Fan
Affiliation:
Chemical and Laser Sciences Division
M. Nastasi
Affiliation:
Materials Science and Technology Division
K.C. Ott
Affiliation:
Exploratory Research and Development Center
E.J. Peterson
Affiliation:
Exploratory Research and Development Center
G.A. Reeves
Affiliation:
Materials Science and Technology Division
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Abstract

Thin films of the Tl‐based superconductors often have relatively poor properties because of film/substrate interdiffusion which occurs during the anneal. We have therefore investigated the use of BaF2 as a diffusion barrier. TICaBaCuO thin films were deposited by dc magnetron sputtering onto MgO <100> substrates, both with and without an evaporation‐deposited BaF2 buffer layer, and post‐annealed in a Tl over‐pressure. Electrical properties of the films were determined by four‐point probe analysis, and compositions were measured by ion‐backscattering spectroscopy. Structural analysis was performed by X‐ray diffraction and scanning electron microscopy. The BaF2 buffer layers were found to significantly improve the properties of the TICaBaCuO thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 671
Copyright
Copyright © Materials Research Society 1990

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References

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