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Use of a Field Effect Transistor to Study Phototransport Properties of a-Si:H
Published online by Cambridge University Press: 01 January 1993
Abstract
We report new measurements of the diffusion length of minority photocarriers in thin film amorphous silicon field effect transistor structures. We are able to vary the majority carrier photoconductance by more than four orders of magnitude while monitoring the effective ambipolar diffusion length using the photocarrier grating technique.
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- Copyright © Materials Research Society 1993
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