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A Unity Quantum Efficiency Photodiode using Porous Silicon Film

Published online by Cambridge University Press:  28 February 2011

J. P. Zheng ,
K. L. Jiao ,
W. P. Shen ,
W. A. Anderson  and
H. S. Kwok
J. P. Zheng
Affiliation:
Center for Electronic and Electro-optic Materials, and Department of Electrical and Computer Engineering, State University of New York at BuffaloAmherst, NY 14260
K. L. Jiao
Affiliation:
Center for Electronic and Electro-optic Materials, and Department of Electrical and Computer Engineering, State University of New York at BuffaloAmherst, NY 14260
W. P. Shen
Affiliation:
Center for Electronic and Electro-optic Materials, and Department of Electrical and Computer Engineering, State University of New York at BuffaloAmherst, NY 14260
W. A. Anderson
Affiliation:
Center for Electronic and Electro-optic Materials, and Department of Electrical and Computer Engineering, State University of New York at BuffaloAmherst, NY 14260
H. S. Kwok
Affiliation:
Center for Electronic and Electro-optic Materials, and Department of Electrical and Computer Engineering, State University of New York at BuffaloAmherst, NY 14260
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Abstract

A highly sensitive photodiode was fabricated with a metal-porous silicon junction. The spectral response was measured for the wavelength range from 400 nm to 1.075 μm. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of 630 to 900 nm without any anti-reflective coating. The detector response time is about 2 ns for a 9 volts reverse bias. The acceptance angle of photodiode is 2 times better than that of conventional Si detectors. The uniformity and stability were also studied. Possible mechanisms are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 371
Copyright
Copyright © Materials Research Society 1993

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References

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