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Uniformity Control in Elemental Vapor Transport Epitaxy

Published online by Cambridge University Press:  25 February 2011

A. I. Gurary ,
G. S. Tompa ,
R. A. Stall ,
S. Liang ,
Y. Lu  and
H. C. KUO
A. I. Gurary
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873.
G. S. Tompa
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873.
R. A. Stall
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873.
S. Liang
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873.
Y. Lu
Affiliation:
RUTGERS University, Department of Electrical and Computer Engineering, Piscataway, NJ 08855–0909.
H. C. KUO
Affiliation:
RUTGERS University, Department of Electrical and Computer Engineering, Piscataway, NJ 08855–0909.
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Abstract

Elemental Vapor Transport Epitaxy (EVTE) is a novel technique for semiconductor manufacturing, which combines the advantages of Molecular Beam Epitaxy (MBE) and Vapor Phase Epitaxy (VPE). EVTE provides a high level of elemental flux control, scaling to large deposition areas, and elimination of elemental Ga source related oval defects. EVTE has been successfully applied to the deposition of III-V and II-VI thin films and heterostructures. Design considerations and evaluations of the novel EVTE elements: elemental flux regulating valve operating at temperatures >1250°C with demonstrated response times less than 1 second and elemental flux distribution manifold are presented. The calculated operational parameters for EVTE are in good agreement with the observed experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 233
Copyright
Copyright © Materials Research Society 1993

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References

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