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Uniform Tetragonal WSi2 Layers Formed by RTA

Published online by Cambridge University Press:  28 February 2011

M. Siegal ,
J. J. Santiago ,
J. Van Der Spiegel ,
W. R. Graham  and
M. Setton
M. Siegal
Affiliation:
Laboratory for the Research of Structure and Matter Department of Materials Science and Engineering University of Pennsylvania, Philadelphia, Pa. 19104
J. J. Santiago
Affiliation:
Laboratory for the Research of Structure and Matter Moore School of Electrical Engineering, Center for Sensor Technologies, University of Pennsylvania, Philadelphia, Pa. 19104
J. Van Der Spiegel
Affiliation:
Laboratory for the Research of Structure and Matter Moore School of Electrical Engineering, Center for Sensor Technologies, University of Pennsylvania, Philadelphia, Pa. 19104
W. R. Graham
Affiliation:
Laboratory for the Research of Structure and Matter Department of Materials Science and Engineering University of Pennsylvania, Philadelphia, Pa. 19104
M. Setton
Affiliation:
Laboratory for the Research of Structure and Matter Department of Materials Science and Engineering University of Pennsylvania, Philadelphia, Pa. 19104
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Abstract

Thin films of tungsten silicide with resistivities of 30 – 35 μΩ-cm have been formed by sputter depositing 71 nm of W metal onto (100) oriented, 5 Ω-cm, p-type silicon wafers that were etched in BOE 500 solution. The samples were fast radiatively processed in an RTA system under high vacuum for time anneals ranging from 15 – 50 seconds at a temperature of ∼ 1100°C. The inevitable oxide barrier at the interface is shown to decrease with increasing RTA time.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 673
Copyright
Copyright © Materials Research Society 1987

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