Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-10T00:58:26.204Z Has data issue: false hasContentIssue false
  • English
  • Français

Ultrathin Single Crystal CoSi2 Layers on Si(111) and Si(100)

Published online by Cambridge University Press:  26 February 2011

R. T. Tung ,
J. L. Batstone  and
S. M. Yalisove
R. T. Tung
Affiliation:
AT&T Bell Laboratories, Murray Hill, N. J. 07974
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, Murray Hill, N. J. 07974
S. M. Yalisove
Affiliation:
AT&T Bell Laboratories, Murray Hill, N. J. 07974
Get access

Abstract

The growth of ultrathin epitaxial CoSi2 layers on Si by molecular beam epitaxy has been studied. This paper briefly outlines recent progress in the growth on Si(111) substrates. New results on the growth of epitaxial CoSi2 on Si(100) are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 265
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Present address: Department of Materials Science and Engineering, University of Liverpool, P. O. Box 147, Liverpool, L69 3BX, U.K.

References

REFERENCES

1.Rosencher, E., Delage, S., Arnaud D'Avitaya, F., D'Anterroches, C., Belhaddad, K. and Pfister, J. C., Physica 134 B, 106 (1985).Google Scholar
2.Tung, R. T., Levi, A. F. J. and Gibson, J. M., Appl. Phys. Lett. 48, 635 (1986).Google Scholar
3.Hunt, B. D., Lewis, N., Schowalter, L. J., Hall, E. L. and Turner, L. G., presented at Mat. Res. Symp. Spring 1987, unpublished.Google Scholar
3.d'Anterroches, C. and Arnaud d'Avitaya, F., Thin Solid Films 137, 351 (1986).Google Scholar
4.Tung, R. T., Gibson, J. M. and Levi, A. F. J., Appl. Phys. Lett. 48, 1264 (1986).Google Scholar
5.Hunt, B. D., Lewis, N., Hall, E. L., Turner, L. G., Schowalter, L. J., Okamoto, M. and Hashimoto, S., Mat. Res. Soc. Symp. Proc. 56, 151 (1986).Google Scholar
6.von Känel, H., Henz, J., Ospelt, M. and Wachter, P., to appear in Physica Scripta; and van der Veen, J. F., private communication.Google Scholar
7.Levi, A. F. J., private communication.Google Scholar
8.Levi, A. F. J., Tung, R. T., Batstone, J. L. and Anzlowar, M., these proceedings.Google Scholar
9.Tung, R. T., Gibson, J. M., Jacobson, D. C. and Poate, J. M., Appl. Phys. Lett. 43, 476 (1983).Google Scholar
10.White, A. E., Short, K. T., Dynes, R. C., Garno, J. P. and Gibson, J. M., Appl. Phys. Lett. 50, 95 (1987).Google Scholar
11.Tung, R. T. and Batstone, J. L., Appl. Phys. Lett. in press, Feb. 1988.Google Scholar
12.Tung, R. T. and Hellman, F., MRS Symp. Proc. 94, 65 (1987); and F. Hellman and R. T. Tung, Phys. Rev. B, in press (1988).Google Scholar
13.Tung, R. T., Batstone, J. L. and Yalisove, S. M., J. Electrochem. Soc., in press (1988).Google Scholar
14.Gibson, J. M., Bean, J. C., Poate, J. M. and Tung, R. T., Appl. Phys. Lett. 41, 818 (1982).Google Scholar
15.Yalisove, S. M., Tung, R. T. and Gibson, J. M., to be published.Google Scholar
16.Batstone, J. L., Gibson, J. M. and White, A. E., to be published.Google Scholar
17.Batstone, J. L., Gibson, J. M., Tung, R. T. and Levi, A. F. J., Appl. Phys. Lett. Feb. 29, 1988.Google Scholar
18.Kiely, C. J. and Cherns, D., Inst. Phys. Conf. Ser. 76, 183 (1985).Google Scholar