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Ultrathin Gate Oxides with Shallow Nitrogen Implants as Effective Barriers to Boron Diffusion

Published online by Cambridge University Press:  10 February 2011

Yoshi Ono ,
Yanjun Ma  and
Sheng-Teng Hsu
Yoshi Ono
Affiliation:
Sharp Labs of America, 5700 NW Pacific Rim Blvd., Camas, WA 98607
Yanjun Ma
Affiliation:
Sharp Labs of America, 5700 NW Pacific Rim Blvd., Camas, WA 98607
Sheng-Teng Hsu
Affiliation:
Sharp Labs of America, 5700 NW Pacific Rim Blvd., Camas, WA 98607
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Abstract

Plasma immersion ion implantation (PIII) has been employed to controllably place nitrogen ions from an inductively coupled plasma into a thin furnace grown gate oxide 2.0nm thick with implant voltages from 25 to 500V. Control of the implant energy enables shallow implantation confining the nitrogen mainly within the oxide. Rapid thermal annealing is essential in repairing any damage to the implanted silicon dioxide and silicon while consolidating the bonding of nitrogen into the oxide film prior to gate polysilicon deposition. High frequency capacitance-voltage measurements of capacitors made with BF2+ implanted gates throughout a series of furnace anneals demonstrates the efficiency for blocking boron compared to non-nitrided oxides of similar thickness. Tddb measurements verify excellent reliability compared to a non-implanted oxide for both stress polarities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 39
Copyright
Copyright © Materials Research Society 1999

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References

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