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Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with SiO2

Published online by Cambridge University Press:  28 July 2011

Hans-Joachim Müssig ,
Jarek Dąbrowski ,
Christian Wenger ,
Grzegorz Łupina ,
Roland Sorge ,
Peter Formanek ,
Peter Zaumseil  and
Dieter Schmeißer
Hans-Joachim Müssig
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
Jarek Dąbrowski
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
Christian Wenger
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
Grzegorz Łupina
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
Roland Sorge
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
Peter Formanek
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
Peter Zaumseil
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
Dieter Schmeißer
Affiliation:
Angewandte Physik-Sensorik, BTU Cottbus, PF 10 13 44, D-03013 Cottbus, Germany
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Abstract

We have fabricated Pr-based high-k gate dielectric films by physical vapor deposition of metallic Pr on SiO2 under ultra-high vacuum (UHV) conditions at room temperature, followed by oxidation and annealing steps. The films have been analyzed by electrical measurements, X-ray Photoelectron Spectroscopy (XPS) and Transmission Electron Microscopy (TEM). Some insight into the physical processes involved has been obtained from ab initio calculations. The high-k gate stacks consist of a SiO2-based buffer with an enhanced dielectric constant and a Pr silicate barrier with a high dielectric constant. The role of the buffer is to preserve the high quality of the SiO2/Si(001) interface, and the role of the barrier is to keep the tunneling currents low by increasing its physical thickness. A Pr film deposited on a 1.8 nm SiO2 layer, oxidized at room temperature by air, and annealed in N2 atmosphere with O2 partial pressure of 10−3 mbar results in a stack with the Capacitance Equivalent Thickness of 1.5 nm and leakage of 10−4 A/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D7.10
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Wilk, G.D., Wallace, R.M., Anthony, J.M., J. of Appl. Phys. 89, 5243–5275 (2001).Google Scholar
[2] Muller, D.A., Sorsch, T., Moccio, S., Baumann, F.H., Evans-Lutterodt, K., and Timp, G., Nature 399, 758 (1999).Google Scholar
[3] Osten, H.-J, Dąbrowski, J., Müssig, H.-J., Fissel, A., and Zavodinsky, V., in “Predictive Simulation of Semiconductor Processing”, Dąbrowski, J. and Weber, E. R. (Eds.), Springer, Berlin 2004, p. 259.Google Scholar
[4] Chau, R.R., Kavalieros, J., Roberds, B., Schenker, R., Lionberger, D., Barlage, D., Doyle, B., Arghavani, R., Murthy, A., and Dewey, G., IEDM'2000 Techn. Digest, 45 (2000).Google Scholar
[5] Fissel, A., Dąbrowski, J., and Osten, H. J., J. Appl. Phys. 91, 8968 (2002); D. Schmeißier, H.-J. Müssig, and J. Dąbrowski, accepted for publication in Appl. Phys. Lett. (2004).Google Scholar
[6] Watanabe, H., Ikarashi, N., and Ito, F., Appl. Phys. Lett. 83, 3546 (2003).Google Scholar
[7] Wagner, C.D., Riggs, W.M., Davis, L.E., and Moulder, J.F., Handbook of X-ray photoelectron spectroscopy, (Perkin Elmer, Eden Prairie, 1978).Google Scholar
[8] CRC Handbook of Chemistry and Physics, Lide, D.R. (Ed.), 73rd edition, CRC Press, London 1993.Google Scholar