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Ultrasound Defect Engineering of Transition Metals Via Metal-Acceptor Pairs in Silicon

Published online by Cambridge University Press:  26 February 2011

Ronald E. Bell II ,
Serguei Ostapenko  and
Jacek Lagowski
Ronald E. Bell II
Affiliation:
Center for Microelectronics Research, University of South Florida4202 East Fowler Avenue, MS ENB 118, Tampa, FL 33620-5350, USA
Serguei Ostapenko
Affiliation:
Center for Microelectronics Research, University of South Florida4202 East Fowler Avenue, MS ENB 118, Tampa, FL 33620-5350, USA
Jacek Lagowski
Affiliation:
Center for Microelectronics Research, University of South Florida4202 East Fowler Avenue, MS ENB 118, Tampa, FL 33620-5350, USA
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Abstract

Experimental evidence is provided for ultrasound stimulated dissociation of metal-acceptor pairs in silicon, and also for enhanced diffusion of metal interstitials which may lead to enhanced pairing. The first effect is found dominant in Fe-doped p-type silicon where ultrasound causes low temperature dissociation of Fe-B pairs. This is in contrast to Cr-doped p-type silicon where ultrasound enhances the formation of Cr-B pairs due to enhanced diffusivity of Cr by as much as two orders of magnitude.

In this study, the metal-acceptor reaction was monitored in situ via corresponding changes of the minority carrier diffusion length measured by non-contact surface photovoltage. Ultrasound-stimulated pair reaction can be utilized for metal diagnostics for the silicon IC industry. Thus, with ultrasound, Cr-B pairing can be reduced from months to hours, making possible the identification of Cr via pairing kinetics in a reasonable period of time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 647
Copyright
Copyright © Materials Research Society 1995

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