Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T18:51:32.839Z Has data issue: false hasContentIssue false
  • English
  • Français

Ultra-Smooth Dry Etching of GaAs Using a Hydrogen Plasma Pretreatment

Published online by Cambridge University Press:  22 February 2011

R. J. Shul ,
Kent D. Choquette ,
A. J. Howard ,
D. J. Rieger ,
C. A. Dirubio ,
R. S. Freund  and
R. C. Wetzel
R. J. Shul
Affiliation:
Sandia National Laboratories, MS 0603, Albuquerque, NM 87185-0603
Kent D. Choquette
Affiliation:
Sandia National Laboratories, MS 0603, Albuquerque, NM 87185-0603
A. J. Howard
Affiliation:
Sandia National Laboratories, MS 0603, Albuquerque, NM 87185-0603
D. J. Rieger
Affiliation:
Sandia National Laboratories, MS 0603, Albuquerque, NM 87185-0603
C. A. Dirubio
Affiliation:
Sandia National Laboratories, MS 0603, Albuquerque, NM 87185-0603
R. S. Freund
Affiliation:
AT&T Bell Laboratories, 6300 Mountain Avenue, Murray Hill, NJ 07974
R. C. Wetzel
Affiliation:
AT&T Bell Laboratories, 6300 Mountain Avenue, Murray Hill, NJ 07974
Get access

Abstract

We have attained extremely smooth etched surfaces on GaAs using a hydrogen plasma pretreatment before etching. The resultant morphology exhibits smooth surfaces since the etching proceeds uniformly through the GaAs without micromasking effects arising from a nonuniform surface oxide. We report the effects of hydrogen plasma treatments before RIE of GaAs in two different reactors using a SiCI4 plasma. Optimization of H2 plasma pretreatments has produced improvements in RMS roughness greater than 1 order of magnitude (22.4 to 1.51 nm).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 465
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Choquette, K.D., Hong, M., Freund, R.S., Mannaerts, J.P., and Wetzel, R.C., J. Vac. Sci. Technol. B9, 3502 (1991).CrossRefGoogle Scholar
[2] Friedel, P. and Gourrier, S., Appl. Phys. Lett. 42, 509 (1983).CrossRefGoogle Scholar
[3] Sugata, S., Takamori, S., Takado, N., Asakawa, K., Miyauchi, E., and Hashimoto, H., J. Vac. Sci. Technol. B6, 1087 (1988).CrossRefGoogle Scholar