Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-29T07:32:12.073Z Has data issue: false hasContentIssue false
  • English
  • Français

Ultrafast UV-Laser Induced Oxidation of Silicon

Published online by Cambridge University Press:  22 February 2011

T.E. Orlowski  and
H. Richter
T.E. Orlowski
Affiliation:
Xerox Webster Research Center Rochester, NY 14644
H. Richter
Affiliation:
Xerox Webster Research Center Rochester, NY 14644
Get access

Abstract

A new low temperature method of forming high quality patterned silicon dioxide (SiO2) layers up to a thickness of 1 μm on silicon substrates is presented. UV pulsed laser excitation in an oxygen environment is utilized. IR absorption spectroscopy, CV and IV measurements are employed to characterize the oxide films and the Si-SiO2 interface. No shift but a significant broadening of the Si-O stretching mode compared with thermally grown oxides is found indicating that the laser grown oxide is stoichiometric but with a higher degree of disorder. From CV measurements we deduce a fixed oxide charge near the Si-SiO2 interface of 6×1010/cm2 for oxides that have been thermally annealed in O2 following the laser induced growth making this material a candidate for applications in semiconductor devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 327
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Su, S., Solid State Technol. 24, 72 (1981).Google Scholar
2.Deutsch, T.F., Silversmith, D.J. and Mountain, R.W., Mat. Res. Soc. Symp. Proc. 17, 129 (1983).Google Scholar
3.Boyer, P.K., Rocke, G.A., Ritchie, W.H. and Collins, G.J., Appl. Phys. Lett. 40, 716 (1982).Google Scholar
4.Liu, Y.S., Chiang, S.W. and Bacon, F., Appl. Phys. Lett. 38, 1005 (1981).Google Scholar
5.Deal, B.E. and Grove, A.S., J. Appl. Phys. 36, 3770 (1965).Google Scholar
6.Dial, J.E., Gong, R.E. and Fordemwalt, J.N., J. of Electrochem. Soc. 115, 326 (1967).Google Scholar
7.Pliskin, W.A. and Lehman, H.S., J. of Electrochem. Soc. 112, 1013 (1965).Google Scholar
8.Schumann, L., Lehmann, A., Sobotta, H., Riede, V., Teschner, U. and Hübner, K., Phys. Stat. Sol. B 110, K69 (1982).Google Scholar
9.Wong, J., J.Appl. Phys. 44, 5629 (1973).Google Scholar
10.Nicollian, E.H. and Brews, J.R., MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, NY, 1982).Google Scholar
11.Ligenza, J.R. and Kuhn, M., Solid State Technol. 13, 33 (1970).Google Scholar
12.Pananakakis, G., Kamarinos, G., El-Sayed, M. and LeGoascoy, V., Solid State Electron. 26, 415 (1983).Google Scholar