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Ultrafast Phase Transition of GaAs Surfaces Irradiated by Picosecond Laser Pulses

Published online by Cambridge University Press:  25 February 2011

J.M. Liu ,
A.M. Malvezzi  and
N. Bloembergen
J.M. Liu
Affiliation:
GTE Laboratories, Incorporated, 40 Sylvan Road, Waltham, MA 02254, USA
A.M. Malvezzi
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138, USA
N. Bloembergen
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138, USA
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Abstract

Detailed analysis of the second harmonic signals in reflection from crystalline GaAs surfaces reveals that the structural transition associated with surface melting occurs in less than 2 ps. Preliminary results of picosecond time-resolved reflectivity measurements are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 137
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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