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Ultra Thin SiO2 Mask Layer for Nano-Scale Selective-Area Pecvd of Si

Published online by Cambridge University Press:  03 September 2012

J. W. Park ,
T. Yasuda ,
K. Ikuta ,
L.H. Kuo ,
S. Yamasaki  and
K. Tanaka
J. W. Park
Affiliation:
Joint Research Center for Atom Technology (JRCAT)-Angstrom Technology Partnership (ATP),1-1-4 Higashi.Tsukuba.Ibaraki 305, Japan
T. Yasuda
Affiliation:
Joint Research Center for Atom Technology (JRCAT)-National Institute for Advanced Interdisciplinary Research (NAIR), 1-1-4 Higashi, Tsukuba, Ibaraki 305, Japan
K. Ikuta
Affiliation:
Joint Research Center for Atom Technology (JRCAT)-National Institute for Advanced Interdisciplinary Research (NAIR), 1-1-4 Higashi, Tsukuba, Ibaraki 305, Japan
L.H. Kuo
Affiliation:
Joint Research Center for Atom Technology (JRCAT)-Angstrom Technology Partnership (ATP),1-1-4 Higashi.Tsukuba.Ibaraki 305, Japan
S. Yamasaki
Affiliation:
Joint Research Center for Atom Technology (JRCAT)-National Institute for Advanced Interdisciplinary Research (NAIR), 1-1-4 Higashi, Tsukuba, Ibaraki 305, Japan
K. Tanaka
Affiliation:
Joint Research Center for Atom Technology (JRCAT)-National Institute for Advanced Interdisciplinary Research (NAIR), 1-1-4 Higashi, Tsukuba, Ibaraki 305, Japan
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Abstract

We discuss the applicability of ultrathin SiO2 layers as a mask for low-temperature selective-area deposition of Si. Thin oxide layers with estimated thickness ranging from 4 to 20 Å were formed by oxidizing H-terminated Si(100) surfaces by a remote plasma exposure at room temperature. Low-temperature selective-area deposition was carried out using two different techniques: flow-modulated plasma-enhanced chemical vapor deposition (FM-PECVD) using SiH4 and H2, and very low pressure CVD (VLPCVD) using Si2H4. We show that the ultra-thin plasma oxide layers exhibit good properties for a use as a passivating mask layer, and that the oxide layer can be patterned directly by E-beam irradiation. These results open up a possibility to realize Si-nanostructures formation by selective-area processing. Degradation of the oxide layer by plasma processing is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 271
Copyright
Copyright © Materials Research Society 1997

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