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Ultra - Shallow p+/n Junction Formed by Plasma Ion Implantation

Published online by Cambridge University Press:  17 March 2011

Sungkweon Baek ,
Chel-Jong Choi ,
Tae-Yeon Seong ,
Hyunsang Hwang ,
H. K. Kim  and
D. W. Moon
Sungkweon Baek
Affiliation:
Department of Materials Science and Engineering Kwangju Institute of Science and Technology #1, Oryong-dong, Puk-gu, Kwangju, 500-712, KOREA
Chel-Jong Choi
Affiliation:
Department of Materials Science and Engineering Kwangju Institute of Science and Technology #1, Oryong-dong, Puk-gu, Kwangju, 500-712, KOREA
Tae-Yeon Seong
Affiliation:
Department of Materials Science and Engineering Kwangju Institute of Science and Technology #1, Oryong-dong, Puk-gu, Kwangju, 500-712, KOREA
Hyunsang Hwang
Affiliation:
Department of Materials Science and Engineering Kwangju Institute of Science and Technology #1, Oryong-dong, Puk-gu, Kwangju, 500-712, KOREA
H. K. Kim
Affiliation:
Korea Research Institute of Standards and Science P. O. Box, 102, Yusong, Taejon, 300-600, KOREA
D. W. Moon
Affiliation:
Korea Research Institute of Standards and Science P. O. Box, 102, Yusong, Taejon, 300-600, KOREA
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Abstract

We have investigated the electrical characteristics, junction depth and defect of ultrashallow junctions formed by using a plasma doping procedure. Compared with ultralow energy boron ion implantation at 500eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma doped samples were 15 nm and 33 nm after annealing for 10s at 900 °C and 950 °C, respectively. For the same junction depth, the sheet resistance of the B2H6 plasma doped sample is an order of magnitude less than that of the 500eV B ion implanted sample. Based on cross-sectional transmission electron microscope (TEM) and deep level transient spectroscopy (DLTS) analysis, the defects formed by the B2H6 plasma doping process can be completely removed by annealing at 950 °C for 10s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B3.7
Copyright
Copyright © Materials Research Society 2000

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