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UHV Model Experiments of Electrochemical Etching of GaAs BY H2O/Br2

Published online by Cambridge University Press:  10 February 2011

O. Henrion ,
A. Klein ,
C. Ettenkofer  and
W. Jaegermann
O. Henrion
Affiliation:
Hahn-Meitner-Institut, Abteilung CG, Glienicker Straβe 100, 14109 Berlin, Germany
A. Klein
Affiliation:
Hahn-Meitner-Institut, Abteilung CG, Glienicker Straβe 100, 14109 Berlin, Germany
C. Ettenkofer
Affiliation:
Hahn-Meitner-Institut, Abteilung CG, Glienicker Straβe 100, 14109 Berlin, Germany
W. Jaegermann
Affiliation:
Hahn-Meitner-Institut, Abteilung CG, Glienicker Straβe 100, 14109 Berlin, Germany
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Abstract

To investigate the initial steps of GaAs etching Br2 and H2O were (co)adsorbed onto the (110) cleavage plane at 100 K and the interaction investigated by SXPS and LEED. H2O is dissociatively adsorbed at low temperatures and leads to Fermi level pinning close to midgap. Br2 leads, depending on coverage, to the formation of bromides of different stoichiometries. During annealing to 290 K the bromides mostly evaporate from the surface (etching). Br2 and H2O coadsorption leads to Ga-oxide remaining on the surface. For the reactive interfaces band bending is not observed. The results of the adsorption experiments are compared to electrochemically prepared surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 451: Symposium P – Electrochemical Synthesis and Modification , 1996 , 245
Copyright
Copyright © Materials Research Society 1997

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References

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