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Two-Dimensional Excitons in Siloxene

Published online by Cambridge University Press:  25 February 2011

M. S. Brandt ,
M. Rosenbauer  and
M. Stutzmann
M. S. Brandt
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto CA 94304
M. Rosenbauer
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto CA 94304
M. Stutzmann
Affiliation:
Max-Planck-Institut für Festkürperforschung, Heisenbergstr. 1, D 7000 Stuttgart 80, Germany
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Abstract

The luminescence properties of two different modifications of siloxene are studied with photoluminescence excitation spectroscopy (PLE) und optically detected magnetic resonance (ODMR). The luminescence of as prepared siloxene, which consists of isolated silicon planes, is resonantly excited at the bandgap, indicating a direct bandstructure. The observation of Δm = ±2 transitions in ODMR shows that triplet excitons contribute to the luminescence process. In contrast, annealed siloxene consisting primarily of six-membered silicon rings shows a PLE typical of a material with an indirect bandgap. The ODMR signal of annealed siloxene and of porous silicon show the same Gaussian line with a typical width of 400 G, which can arise from strong dipolar coupling of an electron and a hole ≈ 5Å apart.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 301
Copyright
Copyright © Materials Research Society 1993

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