Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T17:36:13.505Z Has data issue: false hasContentIssue false
  • English
  • Français

Two-Dimensional Distribution of the Residual Stress in MBE-Grown InGaAs/GaAs Strained Layer Superlattices

Published online by Cambridge University Press:  10 February 2011

K. lizuka ,
H. Watanabe ,
M. Komatsu  and
T. Suzuki
K. lizuka
Affiliation:
Nippon Institute of Technology 4–1 Gakuendai, Miyashiro, Minami-Saitama, Saitama 345, JAPAN
H. Watanabe
Affiliation:
Nippon Institute of Technology 4–1 Gakuendai, Miyashiro, Minami-Saitama, Saitama 345, JAPAN
M. Komatsu
Affiliation:
Nippon Institute of Technology 4–1 Gakuendai, Miyashiro, Minami-Saitama, Saitama 345, JAPAN
T. Suzuki
Affiliation:
Nippon Institute of Technology 4–1 Gakuendai, Miyashiro, Minami-Saitama, Saitama 345, JAPAN
Get access

Abstract

Distribution of the residual stress in InGaAs/GaAs strained layer superlattices (SLSs) has been investigated by the micro-focus photoluminescence (PL) method and PL topography. Dark lines parallel or perpendicular to [011] direction were observed in the samples by PL topography. The density of dark lines was decreased as the thickness of In0.1Ga0.9As layers increased. Such dark lines were observed even in a sample whose thickness was thinner than critical value. These dark areas corresponded to the regions where the peak wavelength of PL spectrum was shifted to longer side because of tensile stress. These results were explained well by our proposed model. That is, tensile stress acts the top of mountainous regions of wrinkles which were formed by compressive stress caused by the difference of the lattice constant between InGaAs and GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 451
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Strained-Layer Superlattices: Material Science and Technology, edited by Willardson, R. K. and Beer, A. C. (Academic Press, New York, 1990) Semiconductors and Semimetals Vol.33, Chap.2.Google Scholar
2.Chang, K. H., Bhattacharya, P. K. and Gibala, R., J.Appl.Phys. 65 3391 (1989)Google Scholar
3.Okamoto, K., Tosaka, H. and Yamaguchi, K., Jpn.J.Appl.Phys. 30 1239 (1991).Google Scholar
4.Mitchell, T. E. and Unal, O., J.Electron.Mater. 20 723 (1991).Google Scholar
5.Matthews, J. W. and Blakeslee, A. E., J.Cryst.Growth 27 118 (1974).Google Scholar
6.Iizuka, K., Yoshida, T., Suzuki, T. and Hirose, H., J.Cryst.Growth 111 429 (1991).Google Scholar
7.Iizuka, K. and Suzuki, T. in Defect Recognition and Image Processing in III-V Compounds II, edited by Weber, E. (Proc. 2nd Int. Symp. DRIP in III-V Compounds, Monterey, CA, 1987), pp.233–240.Google Scholar
8.Iizuka, K., Matsumaru, K., Suzuki, T., Hirose, H., Suzuki, K. and Okamoto, H., J.Cryst.Growth 150 13 (1995).Google Scholar
9.Iizuka, K., Matsumaru, K., Suzuki, T., Takahira, Y., Nishioka, T. and Okamoto, H., J.Cryst.Growth 175/176 447 (1997).Google Scholar
10.Grundmann, M.. Lienert, U. and Bimberg, D., Appl.Phys.Lett. 55 1765 (1989).Google Scholar
11.Singh, J., in Properties of Lattice-matched and Strained Indium Gallium Arsenide.,edited by Bhattacharya, P. (INSPEC, London, 1993) pp.61–69.Google Scholar