Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T02:34:54.787Z Has data issue: false hasContentIssue false
  • English
  • Français

Two-contact Circular Test Structure for Determining Specific Contact Resistivity

Published online by Cambridge University Press:  17 July 2013

Y. Pan ,
G. K. Reeves ,
P. W. Leech ,
P. Tanner  and
A. S. Holland
Y. Pan
Affiliation:
RMIT University, School of Electrical and Computer Engineering, Melbourne, Australia
G. K. Reeves
Affiliation:
RMIT University, School of Electrical and Computer Engineering, Melbourne, Australia
P. W. Leech
Affiliation:
RMIT University, School of Electrical and Computer Engineering, Melbourne, Australia
P. Tanner
Affiliation:
Griffith University, Queensland Microtechnology Facility, Brisbane, Australia
A. S. Holland
Affiliation:
RMIT University, School of Electrical and Computer Engineering, Melbourne, Australia
Get access

Abstract

As ohmic contacts decrease in size and approach nanoscale dimensions, accurate electrical characterization is essential, requiring the development of suitable test structures for this task. We present here a new test structure derived from the standard three-contact circular transmission line model (CTLM) [1], for determining the specific contact resistivity of ohmic contacts. This test structure minimizes sources of error which arise from the CTLM by – (i) reducing the number of contacts within one test pattern from three to two, (ii) ensuring the assumption of equipotential metal contacts used in modelling is more easily attained experimentally, and (iii) allowing the fabrication of reduced geometrical dimensions essential for determining low specific contact resistivity values. The analytical expressions are presented and experiment results are undertaken to demonstrate the accuracy of the technique. There are no error corrections required for determining contact parameters using the presented test structure.

Keywords

microstructuremicroelectronicsthin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1553: Symposium T – Electrical Contacts to Nanomaterials and Nanodevices , 2013 , mrss13-1553-t03-13
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Reeves, G. K., Solid State Electron, vol. 23, no. 5, pp. 487–490, May. 1980.CrossRefGoogle Scholar
Schroder, D. K., Semiconductor Material and Device Characterization, 3rd ed. Hoboken, NJ: Wiley, pp. 135–157, 2006.Google Scholar
Stavitski, N., van Dal, M. J. H., Lauwers, A., Vrancken, C., Kovalgin, A. Y., and Wolters, R. A. M., IEEE Trans. Electron Devices, vol. 55, pp. 1170–1176, May. 2008.CrossRefGoogle Scholar
Reeves, G. K., Harrison, H. B., IEEE Electron Device Letters, vol. EDL-3, pp. 111–113, May. 1982.CrossRefGoogle Scholar
Pan, Y., Reeves, G. K., Leech, P. W., Holland, A. S., IEEE Trans. Electron Devices, vol. 60, pp. 1202–1207, Mar. 2013.CrossRefGoogle Scholar
Wang, L., Dimitrijev, S., Han, J., Iocopi, F. and Hold, L., Tanner, P., Harrison, H.B., Thin Solid Films 519 (2011) 6443–6446.CrossRefGoogle Scholar