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Two Step O2/N2O Plasma Annealing for the Reduction of Leakage Current in Amorphous Ta2O5 Films

Published online by Cambridge University Press:  10 February 2011

W.S. Lau ,
M.T. Chandima Perera ,
T. Han ,
N. P. Sandler ,
C.H. Tung ,
T.T. Sheng ,
P.K. Chu  and
T.C. Chong
W.S. Lau
Affiliation:
Chartered Semiconductor Manufacturing Ltd., R&D Advanced Technology Department, 60 Woodlands Industrial Park D St.2, Singapore 738406, Republic of Singapore. E-mail: [email protected]
M.T. Chandima Perera
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685, Republic of Singapore
T. Han
Affiliation:
Lam Research Corporation, 4650 Cushing Parkway, Fremont, California 94538, USA
N. P. Sandler
Affiliation:
Lam Research Corporation, 4650 Cushing Parkway, Fremont, California 94538, USA
C.H. Tung
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685, Republic of Singapore
T.T. Sheng
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685, Republic of Singapore
P.K. Chu
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong
T.C. Chong
Affiliation:
Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Republic of Singapore
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Abstract

As deposited tantalum pentoxide (Ta2O5) films are amorphous. The films will remain amorphous after O2 or N2O plasma annealing at low temperature. High temperature annealing will produce polycrystalline films where grain boundaries can generate leakage current. Previously, we have shown that N2O plasma annealing is superior to O2 plasma annealing in terms of leakage current reduction for AI/Ta2O5/Si capacitors. However, for TiN/Ta2O5/Si capacitors, the leakage current tends to be higher at low bias voltage for N2O plasma annealing compared to O2 plasma annealing. By adding an 02 plasma annealing step and then comparing TiN/Ta2O5/Si capacitors with two step O2/N2O plasma annealing with respect to similar structures with two step O2/O2 plasma annealing, it can be easily seen that TiN/Ta2O5/Si capacitors with two step O2/N2O plasma annealing have lower leakage current compared to similar structures with two step O2/O2 plasma annealing throughtout the voltage range tested.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 501
Copyright
Copyright © Materials Research Society 1999

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References

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