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Two- and three-Dimensional Refractive Index Lattices Formed by Laterally Patterned Porous Silicon Layers

Published online by Cambridge University Press:  10 February 2011

S. Uehara
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Musashino-shi, Tokyo 180-8633, Japan, [email protected]
H. Sasabu
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Musashino-shi, Tokyo 180-8633, Japan, [email protected]
K Taira
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Musashino-shi, Tokyo 180-8633, Japan, [email protected]
T. Hashimoto
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Musashino-shi, Tokyo 180-8633, Japan, [email protected]
T. Matsubara
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Musashino-shi, Tokyo 180-8633, Japan, [email protected]
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Abstract

Porous silicon was used to fabricate refractive index lattices. Patterned n-doping and/ or substrate etching were used to introduce lateral periodicity. By anodizing p-type substrate with an n-doped area, we realized large refractive index contrast two-dimensional lattices with underlying cladding layer. The anodization process showed an effect specific to the small dimensional patterning and this effect has significant influence on the formed refractive index structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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