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Tunneling Assisted Photocurrent Multiplication in a-Si Based p-i/Sinx/i-n Structure Junction

Published online by Cambridge University Press:  25 February 2011

M. Yoshimi ,
K. Hattori ,
H. Okamoto  and
Y. Hamakawa
M. Yoshimi
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
K. Hattori
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
H. Okamoto
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
Y. Hamakawa
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
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Abstract

Photocurrent multiplication has been observed in a-Si based p−i/SiNx/i−n junction cells under reverse biased high electric field. An apparent external quantum efficiency exceeds 20. A systematic investigation on electric and optoelectronic properties has been made to clarify the mechanism of photocarrier multiplication. The results indicate the possibility of inter-band tunneling via localized states in the a-SiN layer, which is induced by field-redistribution due to the built-up of trapped charges at the a-SiN/a-Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 453
Copyright
Copyright © Materials Research Society 1990

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References

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