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Tuneable CMOS and Current Mirror Circuit with Double-gate Screen Grid Field Effect Transistors
Published online by Cambridge University Press: 01 February 2011
Abstract
The multiple-gate aspect of the Screen Grid Field Effect Transistor (SGrFET) increases functionality and reduces component count of circuits. An independently-driven gate SGrFET is used to control the switching voltage as well as the gain factor of an inverter. The multi-gate configuration of the SGrFET allows a decrease in output conductance without an increase of transistors count. This leads to a reduction in fabrication complexity, chip area and parasitics. In addition, a simple SGrFETs-based current mirror circuit is proposed with gain factor control.
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- Copyright © Materials Research Society 2010