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Tunable and Wireless Photoimpedance Light Sensor

Published online by Cambridge University Press:  24 October 2014

Tanuj Saxena ,
Sergey Rumyantsev ,
Partha Dutta  and
Michael Shur
Tanuj Saxena
Affiliation:
Department of E.C.S.E, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
Sergey Rumyantsev
Affiliation:
Department of E.C.S.E, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
Partha Dutta
Affiliation:
Department of E.C.S.E, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
Michael Shur
Affiliation:
Department of E.C.S.E, Rensselaer Polytechnic Institute, Troy, NY 12180, USA Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy NY 12180, USA
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Abstract

We report on the effects of the frequency dispersion in light sensitive materials used in photoimpedance wireless sensors. An example of such a sensor is a gated semiconductor connecting two or more fixed capacitances. The impedance of the device under illumination is changed by the change in the photoresistance of the semiconductor layer and the change in the gate-semiconductor capacitance. We report on the design and simulation of the frequency dispersion of the impedance of this device in silicon and discuss the physics and device performance. We also evaluate the dynamic range and sensitivity of the wireless photoimpedance sensors and show their advantages for wireless sensing applications compared to more conventional light sensors.

Keywords

Siphotoconductivitydevices
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1666: Symposium A – Film-Silicon Science and Technology , 2014 , mrss14-1666-a12-02
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Ciplys, D., Chivukula, V. S., Sereika, A., Rimeika, R., Shur, M. S., Hu, X., and Gaska, R., “Wireless UV sensor based on photocapacitive effect in GaN,” Electron. Lett., vol. 45, no. 12, p. 653, 2009.CrossRefGoogle Scholar
Chivukula, V., Ciplys, D., Sereika, A., Shur, M., Yang, J., and Gaska, R., “AlGaN based highly sensitive radio-frequency UV sensor,” Appl. Phys. Lett., vol. 96, no. 16, p. 163504, Apr. 2010.Google Scholar
Lopez, D. et Al., “MOS capacitors characterization under illumination” IEEE 26th International Conference on Microelectronics, pp 583–585, 2008 Google Scholar
Grosvalet, J. and Jund, C., “Influence of illumination on MIS capacitances in the strong inversion region,” IEEE Trans. Electron Devices, vol. 14, no. 11, pp. 777–780, Nov. 1967.CrossRefGoogle Scholar
Chakrabarti, P., Abraham, B. R., Dhingra, A., Das, A., Sharan, B. S., and Maheshwari, V., “Effect of illumination on the characteristics of a proposed hetero-MIS diode,” IEEE Trans. Electron Devices, vol. 39, no. 3, pp. 507–514, Mar. 1992.CrossRefGoogle Scholar
Saxena, T., Rumyantsev, S. L., Dutta, P. S., and Shur, M., “CdS based novel photo-impedance light sensor,” Semicond. Sci. Technol., vol. 29, no. 2, p. 025002, Feb. 2014.Google Scholar