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A Trial for Micro-Scale Evaluation of Adhesion Strength around Cu Metallization Systems

Published online by Cambridge University Press:  01 February 2011

Shoji Kamiya
Affiliation:
[email protected], Nagoya Institute of Technology, Department of Mechanical Engineering, Gokiso-cho, Showa-ku, Nagoya, N/A, Japan, 0527355324, 0527355324
Hitoshi Arakawa
Affiliation:
[email protected], Nagoya Institute of Technology, Department of Mechanical Engineering, Gokiso-cho, Showa-ku, Nagoya, 446-8555, Japan
Hiroshi Shimomura
Affiliation:
[email protected], Nagoya Institute of Technology, Department of Mechanical Engineering, Gokiso-cho, Showa-ku, Nagoya, 446-8555, Japan
Masaki Omiya
Affiliation:
[email protected], Keio University, Department of Mechanical Engineering, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, 223-8522, Japan
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Abstract

Adhesion strength of the interface between Cu film and SiCN cap layer for IC metallization system was evaluated by a technique developed by the authors. In this technique, microscopic specimens with the in-plane dimension less than 10 μm were fabricated by focused ion beam system and loaded directly by a sharp diamond stylus with submicron tip radius. By comparing the crack extension behavior with the three-dimensional numerical simulation, the interface adhesion energy was evaluated to be 5 J/m2. The same interface was subjected also to the four-point bending experiment, which is widely applied to interface adhesion measurement. The evaluation results by the two techniques agreed reasonably well with each other.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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