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Transport Properties Of The Doped Thermoelectric Material K2Bi8–xSbxSe13

Published online by Cambridge University Press:  01 February 2011

Paul W. Brazis ,
John R. Ireland ,
Melissa A. Lane ,
Theodora Kyratsi ,
Duck-Young Chung ,
Mercouri G. Kanatzidis  and
Carl. R. Kannewurf
Paul W. Brazis
Affiliation:
Dept of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208–3118.
John R. Ireland
Affiliation:
Dept of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208–3118.
Melissa A. Lane
Affiliation:
Dept of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208–3118.
Theodora Kyratsi
Affiliation:
Department of Chemistry, Michigan State University, East Lansing, MI 48824–1322.
Duck-Young Chung
Affiliation:
Department of Chemistry, Michigan State University, East Lansing, MI 48824–1322.
Mercouri G. Kanatzidis
Affiliation:
Department of Chemistry, Michigan State University, East Lansing, MI 48824–1322.
Carl. R. Kannewurf
Affiliation:
Dept of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208–3118.
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Abstract

The synthesis, physicochemical, spectroscopic, and structural characterization of the compound β-K2Bi8Se13 has been previously reported. The results indicated that this material should be investigated further for possible thermoelectric applications. β-K2Bi8Se13 exhibits excellent electrical conductivity values at room temperature while maintaining high Seebeck coefficients. In this work, the optimization of the compound β-K2Bi8Se13 is continued by the introduction of varying concentrations of several different dopants. The value of x in K2Bi8– xSbxSe13 was varied in order to find the composition with minimum thermal conductivity. Where possible, transport measurements were carried out on both single crystal and polycrystalline ingot material. From these data, the trends in the key parameters were identified for optimizing the power factor and figure of merit.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 626: Symposium Z – Thermoelectric Materials 2000 - The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications , 2000 , Z8.1A
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] Chung, D.-Y., Choi, K.-S., Iordanidis, L., Schindler, J. L., Brazis, P. W., Kannewurf, C. R., Chen, B., Hu, S., Uher, C., and Kanatzidis, M. G., Chemistry of Materials, vol. 9, pp. 3060–3071, (1997).Google Scholar
[2] Brazis, P. W., Rocci-Lane, M. A., Ireland, J. R., Chung, D.-Y., and Kanatzidis, M. G. in Proceedings, 18th International Conference on Thermoelectrics, The International Thermoelectric Society (IEEE, Piscataway, NJ, 1999) pp. 619–622.Google Scholar
[3] Schindler, J. L., Hogan, T. P., Brazis, P. W., Kannewurf, C. R., Chung, D.-Y., and Kanatzidis, M. G., in Thermoelectric Materials - New Directions and Approaches, edited by Kanatzidis, M. G., Lyon, H., Mahan, G., and Tritt, T., (Mater. Res. Soc. Proc. 478, Warrendale, PA, 1997) pp. 327–332.Google Scholar
[4] Brazis, P. W., “Electrical and Thermal Measurement Techniques for New Chalcogenide Thermoelectric and Mixed Conductor Materials,” Ph.D. Dissertation, Northwestern University, (2000).Google Scholar
[5] Uher, C., Hu, S., Yang, J., Meisner, G. P., and Morelli, D. T., in Proceedings, 16th International Conference on Thermoelectrics, The International Thermoelectric Society (IEEE, Piscataway, NJ, 1997).Google Scholar
[6] Kyratsi, T., Chung, D.-Y., Choi, K.-S., Uher, C., and Kanatzidis, M. G., in Thermoelectric Materials 2000 - The Next Generation Materials for Small -Scale Refrigeration and PowerGeneration Applications, edited by Tritt, T., Nolas, G., Mahan, G., Kanatzidis, M. G., and Mandrus, D., (Mater. Res. Soc. Proc. 626, Warrendale, PA, 2001) pp. Z8.8–Z8.8.6.Google Scholar
[7] Kyratsi, T., Chung, D.-Y., and Kanatzidis, M. G., (In preparation).Google Scholar
[8] Marcy, H. O., Marks, T. J., and Kannewurf, C. R., IEEE Transactions on Instrumentation and Measurement, vol. 39, pp. 756–760, (1990).Google Scholar
[9] Hogan, T. P., “Transport Measurements of New Ternary and Quaternary Chalcogenide and Ceramic Systems,” Ph.D. Dissertation, Northwestern University, (1996).Google Scholar
[10] Maldonado, O., Cryogenics, vol. 32, pp. 908–912, (1992).Google Scholar
[11] Bi2Te3 n-type and p-type samples and data obtained from Marlow Industries Inc., Dallas, Texas.Google Scholar
[12] Ioffe, A. F., Semiconductor Thermoelements and Thermoelectric Cooling. (Infosearch Ltd., London, England, 1957).Google Scholar