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Transport Properties of Amorphous Silicon / Silicon Oxide Heterostructures

Published online by Cambridge University Press:  28 February 2011

H. Steemers ,
J. Mort ,
I. Chen ,
F. Jansen ,
S. Grammatica  and
D. Kuhman
H. Steemers
Affiliation:
Xerox Webster Research Center, Webster, NY 14588
J. Mort
Affiliation:
Xerox Webster Research Center, Webster, NY 14588
I. Chen
Affiliation:
Xerox Webster Research Center, Webster, NY 14588
F. Jansen
Affiliation:
Xerox Webster Research Center, Webster, NY 14588
S. Grammatica
Affiliation:
Xerox Webster Research Center, Webster, NY 14588
D. Kuhman
Affiliation:
Xerox Webster Research Center, Webster, NY 14588
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Abstract

The transport of excess carriers in glow-discharge deposited a-Si:H/insulator heterostructures has been studied by time-of-flight and xerographic discharge techniques. Efficient injection of photocarriers from a-Si:H into, and transport through, relatively thick SiOx:N:H has been achieved. A mobility-lifetime product approaching 18−6 cm2V−1 is found for electrons in SiOx:N:H, and time resolved measurements indicate a room temperature mobility of 5×10−6 cm2v−1s−1 at a field of 2×104 Vcm−1, suggesting an electron lifetime of the order of 8.2 seconds. The results are contrasted with transport measurements on thermally grown SiO2 on Si and a transport model involving hopping through defect states within the gap of SiOx:N:H is discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 393
Copyright
Copyright © Materials Research Society 1986

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References

[1] Williams, R., Phys. Rev. 148, A569 (1965)CrossRefGoogle Scholar
[2] Goodman, A.M., Phys. Rev. 144, 588 (1966)Google Scholar
[3] Goodman, A.M., Phys. Rev. 164, 1145 (1967)CrossRefGoogle Scholar
[4] Hughes, R.C., Phys. Rev. Lett. 38, 1333 (1973)Google Scholar
[5] Carasco, F. et al. , J. Appl. Phys. 57, 5386 (1985)Google Scholar
[6] Mort, J. and Chen, I., Appl. Solid State Sci. 5, 69 (1975)Google Scholar
[7] Kanazawa, K.K. and Batra, I.P., J. Appl. Phys. 43, 1845 (1972)CrossRefGoogle Scholar
[8] Spear, W.E., J. Non-Cryst. Solids 1, 197 (1969)Google Scholar
[9] Allen, D. et al. , Proc. of the 7th International Conference on Amorphous and Liquid Semiconductors, edited by Spear, W. E., 323 (1977)Google Scholar
[18] Mort, J. et al. , Solid State Com. 18, 693 (1976)CrossRefGoogle Scholar
[11] Pfister, G., Phys. Rev. Lett. 33, 1474 (1974)Google Scholar