Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-23T10:47:13.886Z Has data issue: false hasContentIssue false
  • English
  • Français

Transparent Oxide Semiconductors Obtained by PLD

Published online by Cambridge University Press:  01 February 2011

Anna Vila ,
Antonis Olziersky ,
Joaquim Font ,
Teresa Andreu ,
Erik Koep  and
Juan Ramon Morante
Anna Vila
Affiliation:
[email protected], University of Barcelona, Electronics Department, Martí i Franqués 1, Barcelona, 08028, Spain
Antonis Olziersky
Affiliation:
[email protected], University of Barcelona, Electronics Department, Marti i Franques 1, Barcelona, 08028, Spain
Joaquim Font
Affiliation:
[email protected], University of Barcelona, Electronics Department, Marti i Franques 1, Barcelona, 08028, Spain
Teresa Andreu
Affiliation:
[email protected], University of Barcelona, Electronics Department, Marti i Franques 1, Barcelona, 08028, Spain
Erik Koep
Affiliation:
[email protected], University of Barcelona, Electronics Department, Marti i Franques 1, Barcelona, 08028, Spain
Juan Ramon Morante
Affiliation:
[email protected], University of Barcelona, Electronics Department, Marti i Franques 1, Barcelona, 08028, Spain
Get access

Abstract

In this work we studied metaloxide films such as ZnO, In2O3-ZnO, In2O3-ZnO-ZrO2 and Ga2O3-In2O3-ZnO deposited by pulsed laser deposition on fused silica substrates at room temperature. Optical transmission measurements in the ultra violet – visible region showed that oxygen-rich atmospheres during deposition help to obtain more transparent films in the optical region while improving overall UV absorption transition related to the band gap. Less resistive films are produced in oxygen-rich atmospheres but an increase of oxygen pressure leads to higher resistivity films.

Keywords

optical propertiesoxidethin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1074: Symposium I – Synthesis and Metrology of Nanoscale Oxides and Thin Films , 2008 , 1074-I07-12
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. KH, Choi, JY, Kim, YS, Lee, HJ, Kim, “ITO/Ag/ITO multilayer films for the application of a very low resistance transparent electrode”, Thin Solid Films, Vol. 341, 1-2, 152–155 (1999)Google Scholar
2. YH, Tak, KB, Kim, HG, Park, KH, Lee, JR, Lee, “Criteria for ITO (indium-tin-oxide) an organic light thin film as the bottom electrode of emitting diode”, Thin Solid Films, Vol. 411, 1, 12–16 (2002)Google Scholar
3. Kobayashi, H, Ishida, T, Nakato, Y, Mori, H, “Mechanism of carrier transport through a silicon-oxide layer for [indium-tin-oxide/silicon-oxide/silicon] solar-cells”, Journal Of Applied Physics, Vol. 78, 6, 3931–3939 (1995)Google Scholar
4. Sberveglieri, G, Benussi, P, Coccoli, G, Gropelli, S, Nelli, P, “Reactively sputtered indium tin oxide polycrystalline thin-films as NO and NO2 gas sensors”, Thin Solid Films, Vol. 186, 2, 349–360, (1990)Google Scholar
5. Muller, J, Weissenrieder, S, “ZnO-thin film chemical sensors”, Fresenius Journal Of Analytical Chemistry, Vol. 349, 5, 380–384, Jun (1994)Google Scholar
6. Monroy, E, Omnes, F, Calle, F, “Wide-bandgap semiconductor ultraviolet photodetectors”, Semiconductor Science And Technology, Vol.18, 4, R33–R51 (2003)Google Scholar
7. Nomura, K, Takagi, A, Kamiya, T, Ohta, H, Hirano, M, Hosono, H, “Amorphous oxide semiconductors for high-performance flexible thin-film transistors”, Japanese Journal Of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, Vol. 45, 5B, 4303–4308, (2006)Google Scholar
8. Minami, T, “Transparent and conductive multicomponent oxide films prepared by magnetron sputtering”, Journal Of Vacuum Science & Technology A, Vol. 17, 4, 1765–1772 Part 2 (1999)Google Scholar
9. Kudo, A, Yanagi, H, Ueda, K, Hosono, H, Kawazoe, H, Yano, Y, “Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors”, Applied Physics Letters, Vol. 75, 18, 2851–2853, (1999)Google Scholar
10. Nomura, K, Ohta, H, Takagi, A, Kamiya, T, Hirano, M, Hosono, H, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors”, Nature, Vol. 432, 7016, 488-492, (2004)Google Scholar
11. Fortunato, E, Barquinha, P, Pimentel, A, Pereira, L, Goncalves, G, Martins, R, “Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm(2)/Vs”, Physica Status Solidi-Rapid Research Letters, Vol. 1, 1, R34–R36, (2007)Google Scholar
12. Minami, T, Miyata, T, Yamamoto, T, “Work function of transparent conducting multicomponent oxide thin films prepared by magnetron sputtering”, Surface & Coatings Technology, Vol. 108, 1-3, 583–587 (1998)Google Scholar
13. Goto, K, Kawashima, T, Tanabe, N, “Heat-resisting TCO films for PV cells”, Solar Energy Materials And Solar Cells, Vol. 90, 18-19, 3251–3260, (2006)Google Scholar
14. BS, Li, YC, Liu, ZS, Chu, DZ, Shen, YM, Lu, JY, Zhang, XW, Fan, “High quality ZnO thin films grown by plasma enhanced chemical vapor deposition”, Journal Of Applied Physics, Vol. 91, 1, 501–505, (2002)Google Scholar
15. Kim, H, JS, Horwitz, SB, Qadri, DB, Chrisey, “Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition”, Thin Solid Films, Vol. 420, 107–111, (2002)Google Scholar
16. Suchea, M, Christoulakis, S, Katharakis, M, Kiriakidis, G, Katsarakis, N, Koudoumas, E, “Substrate temperature influence on the properties of nanostructured ZnO transparent ultrathin films grown by PLD”, Applied Surface Science, Vol. 253, 19, 8141–8145 (2007)Google Scholar
17. Suh K, J, Okada, H, Wakahara H, J, Kim H, J, Cha H, J, “Transparent conducting ZnO films on polymer substrates by pulsed laser deposition Key Engineering Materials, Vol. 270-273, 878–883 (2004)Google Scholar