Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-07T19:20:29.003Z Has data issue: false hasContentIssue false
  • English
  • Français

Transmission Electron Microscopy Study of Ingaas/Gaas Structural Evolution Near the Stranski-Krastanow Transformation

Published online by Cambridge University Press:  10 February 2011

J. Wellman ,
T. George ,
R. Leon ,
S. Fafard ,
J. Zou  and
D. J. H. Cockayne
J. Wellman
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109
T. George
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109
R. Leon
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109
S. Fafard
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada K lA OR6
J. Zou
Affiliation:
Australian Key Center for Microscopy and Microanalysis, The University of Sydney, NSW 2006, Australia
D. J. H. Cockayne
Affiliation:
Australian Key Center for Microscopy and Microanalysis, The University of Sydney, NSW 2006, Australia
Get access

Abstract

An experimental study of the microstructure during formation and evolution of MOCVD-grown In0.6Ga0.4As/GaAs quantum dots (QDs) was undertaken to provide a more thorough understanding of the underlying growth principles. Transmission Electron Microscopy (TEM) was used to examine the evolution of the In0.6Ga0.4As/GaAs system in order to correlate photoluminescence (PL) spectra with structural data. In particular, we have examined the QD size evolution, capped and uncapped, and its possible contribution to the slight QD PL blueshift observed before QD saturation. TEM studies in the QD coalescence regime clarify the microstructural origins of the sharp decrease in QD PL due to large, incoherent islands observed in AFM and TEM images.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 175
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Leon, R. and Fafard, S., Phys. Rev. B 58, R1726 (1998).Google Scholar
2. Leon, R., Marcinkevicius, S., Liao, X. Z., Zou, J., Cockayne, D. J. H., and Fafard, S., presented at 1999 American Physical Society March Meeting, Atlanta, GA, 1999 (unpublished).Google Scholar
3. Leon, R., Lobo, C., Zou, J., Romeo, T., and Cockayne, D. J. H., Phys. Rev. Lett. 81, 2486 (1998).Google Scholar
4. Ven, J. van de Rutten, G. M. J. Raaijmakers, M. J., and Gilig, L. J., J. Crystal Growth 76, 354 (1986).Google Scholar
5. Liao, X. Z., Zou, J. Duan, X. F., Leon, R., Lobo, C., and Cockayne, D. J. H., Phys. Rev. B 58, R4235 (1998).Google Scholar
6. Zou, J. Liao, X. Z., Leon, R., and Cockayne, D., Phys. Rev. B 59, 15 May, 1999 (in press).Google Scholar