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Transmission Electron Microscopy Studies of Strained Si CMOS

Published online by Cambridge University Press:  01 February 2011

Qianghua Xie ,
Peter Fejes ,
Mike Kottke ,
Xiangdong Wang ,
Mike Canonico ,
David Theodore ,
Ted White ,
Mariam Sadaka ,
Victor Vartanian  and
Aaron Thean
...Show all authors
Qianghua Xie
Affiliation:
Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., Tempe AZ 85248
Peter Fejes
Affiliation:
Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., Tempe AZ 85248
Mike Kottke
Affiliation:
Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., Tempe AZ 85248
Xiangdong Wang
Affiliation:
Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., Tempe AZ 85248
Mike Canonico
Affiliation:
Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., Tempe AZ 85248
David Theodore
Affiliation:
Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., Tempe AZ 85248
Ted White
Affiliation:
Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., TX 78721
Mariam Sadaka
Affiliation:
Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., TX 78721
Victor Vartanian
Affiliation:
Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., TX 78721
Aaron Thean
Affiliation:
Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., TX 78721
Bich-Yen Nguyen
Affiliation:
Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., TX 78721
Alex Barr
Affiliation:
Crolles-2, Freescale Semiconductor, 870 rue Jean Monnet 38926 Crolles, France
Shawn Thomas
Affiliation:
Embedded Systems and Science Research Laboratory, Motorola Inc., Tempe AZ 85248
Ran Liu
Affiliation:
School of Micro-electronics, Fudan University, Shanghai 200433, China
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Abstract

In this paper, various types of defects (both threading dislocation and misfit dislocations) in strained Si (sSi) have been analyzed by transmission electron microscopy (TEM). Germanium upper-diffusion has been studied by scanning transmission electron microscopy (STEM) for strained Si on SiGe/SOI. SGOI-devices processed using an optimized thermal budget show minimal Ge diffusion and minimal process related defects. Correlation between the device performance (such as leakage current and reliability) and structural information found in TEM has been established.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E4.31
Copyright
Copyright © Materials Research Society 2005

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References

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