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Transmission Electron Microscopy of Nitrogen Doped ZnSe/GaAs

Published online by Cambridge University Press:  25 February 2011

L. H. Kuo ,
L. Salamanca-Riba ,
J. M. Depuydt ,
H. Cheng  and
J. Qiu
L. H. Kuo
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742–2115
L. Salamanca-Riba
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742–2115
J. M. Depuydt
Affiliation:
3M Company, 3M Center, St. Paul, MN 55144–1000
H. Cheng
Affiliation:
3M Company, 3M Center, St. Paul, MN 55144–1000
J. Qiu
Affiliation:
3M Company, 3M Center, St. Paul, MN 55144–1000
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Abstract

Transmission election microscopy studies show that nitrogen doping changes the misfit dislocation structure in ZnSe films and decreases the density of threading dislocations. There appears to be a critical N doping concentration of ∼ 1.5 × 1018/cm3 above which the density of threading dislocations increases again. Samples with high N doping concentrations (> 1019/cm3 ) also show compensation or decrease in the carrier density of the films. Our TEM observations show that N doping can produce low energy nucleation sites for the 60° misfit dislocations at or close to the ZnSe/GaAs interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 561
Copyright
Copyright © Materials Research Society 1993

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References

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