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Transmission Electron Microscopy and X-Ray Diffraction Studies of a,b-Axis Oriented YBa2Cu3O7-δ Films

Published online by Cambridge University Press:  26 February 2011

S. K. Streiffer ,
B. M. Lairson ,
E. M. Zielinski  and
J. C. Bravman
S. K. Streiffer
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA. 94305
B. M. Lairson
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA. 94305
E. M. Zielinski
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA. 94305
J. C. Bravman
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA. 94305
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Abstract

Quantitative high resolution transmission electron microscopy and x-ray diffraction have been used to study films of YBa2Cu3O7-δ grown on LaAlO3 substrates at low substrate temperatures. Based on analysis of high-resolution micrographs, it is asserted that the films are b-axis oriented near the film-substrate interface, and switch to a-axis oriented at some distance away from the interface, in a manner which varies from sample to sample. Thus, the films undergo a change in orientation as a function of distance from the substrate. X-ray diffraction confirms that these films contain both a-axis oriented and b-axis oriented components normal to the plane of the substrate, consistent with the high-resolution microscopy data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 275: Symposium S – Layered Superconductors: Fabrication, Properties and Applications , 1992 , 771
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Streiffer, S. K., Lairson, B. M., Eom, C. B., Clemens, B. M., Bravman, J. C., and Geballe, T.H., Phys. Rev. B 43, 13007 (1991).Google Scholar
2. Ramesh, R., Inam, A., Hwang, D. M., Ravi, T. S., Sands, T., Xi, X. X., Wu, X. D., Li, Q., Venkatesan, T., and Kilaas, R., J. Mater. Res. 6, 2264 (1991).Google Scholar
3. Eom, C. B., Marshall, A. F., Laderman, S. S., Jacowitz, R. D., and Geballe, T.H., Science 249, 1549–1552(1990).Google Scholar
4. Lee, Mark, Lew, D., Eom, C.B., Geballe, T. H., and Beasely, M. R., Appl. Phys. Lett. 57, 1152–1154 (1990).Google Scholar
5. Barner, J. B., Rogers, C. T., Inam, A., Ramesh, R., and Bersey, S., Appl. Phys. Lett. 59, 742–744 (1991).Google Scholar
6. Asano, H., Yonezawa, H., Asahi, M., and Michikami, O., IEEE Trans. Magn. 27, 844 (1991).Google Scholar
7. Eom, C. B., Sun, J. Z., Lairson, B. M., Streiffer, S. K., Marshall, A. F., Yamamoto, K., Anlage, S. M., Bravman, J.C., Geballe, T. H., Laderman, S. S., Taber, R. C., and Jacowitz, R. D., Physica C 171, 354–382 (1990).Google Scholar
8. Eom, C. B., Marshall, A. F., Triscone, J.-M., Wilkens, B., Laderman, S. S., and Geballe, T. H., Science 251, 780–783 (1991).Google Scholar
9. Sinclair, R., in Introduction to Analytical Electron Microscopy, edited by Hren, John H., Goldstern, Joseph I., and Joy, David C. (Plenum Press, New York, 1979), p. 521.Google Scholar
10. Yvon, K. and François, M., Z. Phys B 76, 413 (1989).Google Scholar
11. Zhao, J., Chem, C. S., Yau, K., Qun-Li, Y., Garrison, S. M., Nonris, P., Gallois, B., and Kear, B., to be submitted to Appl. Phys. Lett.Google Scholar
12. see, for example, Schwartz, L. H. and Cohen, J. B.. Diffraction from Materials, 2nd Edition (Springer-Verlag, New York, 1987), pp. 378–391.Google Scholar