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Transmission Electron Microscopy and Resistivity Measurements on Pd1−x Six Alloys Prepared by Ion Implantation.

Published online by Cambridge University Press:  15 February 2011

A. Traverse ,
M.O. Ruault ,
L. Mendoza-Zelis ,
M. Schack ,
H. Bernas ,
J. Chaumont  and
L. Dumoulin
A. Traverse
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, B.P. N° 1, F. 91406 Orsay.
M.O. Ruault
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, B.P. N° 1, F. 91406 Orsay.
L. Mendoza-Zelis
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, B.P. N° 1, F. 91406 Orsay. Visitor from Universidad de la Plata under a fellowship of CONICET (Republica Argentina).
M. Schack
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, B.P. N° 1, F. 91406 Orsay.
H. Bernas
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, B.P. N° 1, F. 91406 Orsay.
J. Chaumont
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, B.P. N° 1, F. 91406 Orsay.
L. Dumoulin
Affiliation:
Laboratoire de Physique des Solides, Université Paris XI, F. 91406 Orsay.
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Abstract

After 6K implantation of Si in Pd films, resistivity measurements (previously reported (1)) had provided preliminary evidence that an amorphous state had been reached for a composition Pd.80 SiO 20· This result has been recently confirmed by transmission electron microscopy (TEM) observations : diffuse diffraction rings appear in the implanted part of the Pd film. New experiments are reported : - resistivity dose dependence (and temperature dependence) of a 300K Si implanted Pd film ; - in situ TEM experiments to follow the amorphization process during implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 217
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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