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Transitions in Critical Island Size in Metal (100) and (111) Homoepitaxy: A Self-Consistent Rate Equation Approach

Published online by Cambridge University Press:  10 February 2011

Mihail N. Popescu ,
Jacques G. Amar  and
Fereydoon Family
Mihail N. Popescu
Affiliation:
Department of Physics, Emory University, Atlanta, GA 30322
Jacques G. Amar
Affiliation:
Department of Physics and Astronomy, University of Toledo, Toledo, OH 43606
Fereydoon Family
Affiliation:
Department of Physics, Emory University, Atlanta, GA 30322
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Abstract

A self-consistent rate equation (RE) approach to submonolayer growth for a restricted pair-bond model that is relevant to low and intermediate temperature metal (100) and (111) homoepitaxy is introduced. In contrast to previous standard rate equation results, the transition temperature from i = 1 to a higher critical island size is well predicted along with the average island and monomer densities. It is shown that the method's implicit introduction of short-range correlations between attachment/detachment rates, together with a careful estimate of the escape rates for small clusters, are important factors for a good agreement with the kinetic Monte Carlo simulation results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 528: Symposia AA – Mechanisms & Principals of Epitaxial Growth in Metallic Systems , 1998 , 125
Copyright
Copyright © Materials Research Society 1998

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References

[1] Tsao, J.Y., Material Fundamentals of Molecular Beam Epitaxy, World Scientific, Singapore, (1993)Google Scholar
[2] Mo, Y.W., Kleiner, J., Webb, M.B., Lagally, M.G., Phys. Rev. Lett. 66, 1998 (1991).Google Scholar
[3] Ernst, H.J., Fabre, F., and Lapujoulade, J., Phys. Rev. B 46, 1929 (1992).Google Scholar
[4] Hwang, R.Q., Schroder, J., Gunther, C., and Behm, R.J., Phys. Rev. Lett. 67, 3279 (1991); R.Q. Hwang and R.J. Behm, J. Vac. Sci. Technol. B 10, 256 (1992).Google Scholar
[5] Li, W., Vidali, G., and Biham, O., Phys. Rev. B 48, 8336 (1993).Google Scholar
[6] Kopatzki, E., Gunther, S., Nichtl-Pecher, W., and Behm, R.J., Surf. Sci. 284, 154 (1993).Google Scholar
[7] Rosenfeld, G., Servaty, R., Teichert, C., Poelsema, B., and Comsa, G., Phys. Rev. Lett. 71, 895 (1993).Google Scholar
[8] Stroscio, J.A., Pierce, D.T., and Dragoset, R.A., Phys. Rev. Lett. 70, 3615 (1993); J.A. Stroscio and D.T. Pierce, Phys. Rev. B 49, 8522 (1994).Google Scholar
[9] Zuo, J.-K. and Wendelken, J.F., Phys. Rev. Lett. 66, 2227 (1991); J.-K. Zuo, J.F. Wendelken, H. Durr, and C.-L. Liu, ibid., 72, 3064 (1994).Google Scholar
[10] Chambliss, D.D. and Wilson, R.J., J. Vac. Sci. Technol. B 9, 928 (1991); D.D. Chambliss and K.E. Johnson, Phys. Rev. B 50, 5012 (1994).Google Scholar
[11] Jiang, Q. and Wang, G.C., Surf. Sci. 324, 357 (1995).Google Scholar
[12] Tsui, F., Wellman, J., Uher, C., and Clarke, R., Phys. Rev. Lett. 76, 3164 (1996).Google Scholar
[13] Venables, J. A., Spiller, G.D., and Hanbucken, M., Rep. Prog. Phys. 47, 399 (1984); J. A. Venables, Philos. Mag. 27, 697 (1973); Phys. Rev. B 36, 4153 (1987).Google Scholar
[14] Ratsch, C., Zangwill, A., Smilauer, P., and Vvedensky, D.D., Phys. Rev. Lett. 72, 3194 (1994).Google Scholar
[15] Amar, J.G., Family, F. and Lam, P.M., Phys. Rev. B 50, 8781 (1994).Google Scholar
[16] Amar, J.G. and Family, F., Phys. Rev. Lett. 74, 2066 (1995).Google Scholar
[17] Bartelt, M.C. and Evans, J.W., Surf Sci. 344, 1193 (1995).Google Scholar
[18] Bartelt, M.C. and Evans, J.W., Phys. Rev. B 54, R17359 (1996).Google Scholar
[19] Amar, J.G. and Family, F., Thin Solid Films 272, 208 (1996).Google Scholar
[20] Bales, G.S. and Chrzan, D.C., Phys. Rev. B 50, 6057 (1994).Google Scholar
[21] Bales, G.S. and Zangwill, A., Phys. Rev. B 55, 1973 (1997).Google Scholar
[22] Amar, J.G. and Family, F., Surf. Sci. 382, 170 (1997).Google Scholar
[23] Smoluchowski, M. von, Z. Phys. Chem. 17, 557 (1916); ibid., 92, 129 (1917).Google Scholar
[24] Zhang, Z., Chen, X., and Lagally, M.G., Phys. Rev. Lett. 73, 1829 (1994).Google Scholar
[25] Ratsch, C., Smilauer, P., Zangwill, A., Vvedensky, D.D., Surf Sci. 328, L599 (1995).Google Scholar
[26] Popescu, M.N., Amar, J.G. and Family, F., Phys. Rev. B (to appear).Google Scholar