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Transition from Metallic to Semiconducting Behavior in Oxygen Plasma-treated Single-layer Graphene

Published online by Cambridge University Press:  07 July 2011

Amirhasan Nourbakhsh ,
Mirco Cantoro ,
Tom Vosch ,
Geoffrey Pourtois ,
Johan Hofkens ,
Marc M. Heyns ,
Bert F. Sels  and
Stefan De Gendt
Amirhasan Nourbakhsh
Affiliation:
imec, Kapeldreef 75, B-3001 Leuven, Belgium Department of Microbial and Molecular Systems, Katholieke Universiteit Leuven, Kasteelpark Arenberg 23, B-3001 Leuven, Belgium
Mirco Cantoro*
Affiliation:
imec, Kapeldreef 75, B-3001 Leuven, Belgium Department of Physics and Astronomy, Katholieke Universiteit Leuven, Celestijnenlaan 200d, B-3001 Leuven, Belgium
Tom Vosch
Affiliation:
Department of Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200f, B-3001 Leuven, Belgium
Geoffrey Pourtois
Affiliation:
imec, Kapeldreef 75, B-3001 Leuven, Belgium
Johan Hofkens
Affiliation:
Department of Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200f, B-3001 Leuven, Belgium
Marc M. Heyns
Affiliation:
imec, Kapeldreef 75, B-3001 Leuven, Belgium Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Kasteelpark Arenberg 44, B-3001 Leuven, Belgium
Bert F. Sels
Affiliation:
imec, Kapeldreef 75, B-3001 Leuven, Belgium Department of Microbial and Molecular Systems, Katholieke Universiteit Leuven, Kasteelpark Arenberg 23, B-3001 Leuven, Belgium
Stefan De Gendt
Affiliation:
imec, Kapeldreef 75, B-3001 Leuven, Belgium Department of Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200f, B-3001 Leuven, Belgium
*
*Electronic mail: [email protected]
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Abstract

We investigate the structural, optical and electrical properties of single-layer graphene exposed to oxygen plasma treatment. We find that the pristine semimetallic behavior of graphene disappears upon plasma treatment, in favour of the opening of a bandgap and the featuring of semiconducting properties. The metal-to-semiconductor transition observed appears to be dependent on the plasma treatment time. The semiconducting behavior is also confirmed by photoluminescence measurements. The opening of a bandgap in graphene is explained in terms of graphene surface functionalization with oxygen atoms, bonded as epoxy groups. Ab initio calculations of the density of states show more details about the oxygen–graphene interaction and its effects on the graphene optoelectronic properties, predicting no states near the Fermi level at increasing epoxy group density. The structural changes are also monitored by Raman spectroscopy, showing the progressive evolution of the sp2 character of pristine graphene to sp3, due to the lattice decoration with out-of-plane epoxy groups.

Keywords

Cluminescenceelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1336: Symposium P – Interface Engineering for Post-CMOS Emerging Channel Materials , 2011 , mrss11-1336-p02-07
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

[1] Castro Neto, A.H., Guinea, F., Peres, N.M.R., Novoselov, K.S., and Geim, A.K., Rev. Mod. Phys. 81, 109 (2009).Google Scholar
[2] Sprinkle, M., Soukiassian, P., de Heer, W.A., Berger, C., and Conrad, E.H., Phys. Status Solidi-R 3, A91 (2009).Google Scholar
[3] Lin, Y.M., Perebeinos, V., Chen, Z.H., and Avouris, P., Phys. Rev. B 78, 161409R (2008).Google Scholar
[4] Lemme, M.C., Echtermeyer, T.J., Baus, M., and Kurz, H., IEEE Electr. Device L. 28, 282 (2007).Google Scholar
[5] Meric, I., Han, M.Y., Young, A.F., Ozyilmaz, B., Kim, P., and Shepard, K.L., Nature Nanotechnol. 3, 654 (2008).Google Scholar
[6] Novoselov, K.S., Jiang, D., Schedin, F., Booth, T.J., Khotkevich, V.V., Morozov, S.V., and Geim, A.K., P. Natl Acad.Sci. USA 102, 10451 (2005).Google Scholar
[7] Vosch, T., Cotlet, M., Hofkens, J., Van der Biest, K., Lor, M., Weston, K., Tinnefeld, P., Sauer, M., Latterini, L., Mullen, K., and De Schryver, F.C., J. Phys. Chem. A 107, 6920 (2003).Google Scholar
[8] Perdew, J.P., Burke, K., and Ernzerhof, M., Phys. Rev. Lett. 78, 1396 (1997).Google Scholar
[9] Giannozzi, P., Baroni, S., Bonini, N., Calandra, M., Car, R., Cavazzoni, C., Ceresoli, D., Chiarotti, G.L., Cococcioni, M., Dabo, I., Dal Corso, A., de Gironcoli, S., Fabris, S., Fratesi, G., Gebauer, R., Gerstmann, U., Gougoussis, C., Kokalj, A., Lazzeri, M., Martin-Samos, L., Marzari, N., Mauri, F., Mazzarello, R., Paolini, S., Pasquarello, A., Paulatto, L., Sbraccia, C., Scandolo, S., Sclauzero, G., Seitsonen, A.P., Smogunov, A., Umari, P., and Wentzcovitch, R.M., J. Phys.-Condens. Mat. 21, (2009).Google Scholar
[10] Ferrari, A.C., and Robertson, J., Phil. T. R. Soc. Lond. A 362, 2477 (2004).Google Scholar
[11] Ferrari, A.C., Solid State Commun. 143, 47 (2007).Google Scholar
[12] Ferrari, A.C., Meyer, J.C., Scardaci, V., Casiraghi, C., Lazzeri, M., Mauri, F., Piscanec, S., Jiang, D., Novoselov, K.S., Roth, S., and Geim, A.K., Phys. Rev. Lett. 97, 187401 (2006).Google Scholar
[13] Ferrari, A.C., and Robertson, J., Phys. Rev. B 61, 14095 (2000).Google Scholar
[14] Dikin, D.A., Stankovich, S., Zimney, E.J., Piner, R.D., Dommett, G.H.B., Evmenenko, G., Nguyen, S.T., and Ruoff, R.S., Nature 448, 457 (2007).Google Scholar
[15] Cai, W.W., Piner, R.D., Stadermann, F.J., Park, S., Shaibat, M.A., Ishii, Y., Yang, D.X., Velamakanni, A., An, S.J., Stoller, M., An, J.H., Chen, D.M., and Ruoff, R.S., Science 321, 1815 (2008).Google Scholar
[16] Gao, X.F., Jang, J., and Nagase, S., J. Phys. Chem. C 114, 832 (2010).Google Scholar
[17] Gokus, T., Nair, R.R., Bonetti, A., Bohmler, M., Lombardo, A., Novoselov, K.S., Geim, A.K., Ferrari, A.C., and Hartschuh, A., ACS Nano 3, 3963 (2009).Google Scholar
[18] Kim, D.C., Jeon, D.Y., Chung, H.J., Woo, Y., Shin, J.K., and Seo, S., Nanotechnology 20, (2009).Google Scholar
[19] Nourbakhsh, A., Cantoro, M., Hadipour, A., Vosch, T., van der Veen, M.H., Heyns, M.M., Sels, B.F., and De Gendt, S., Appl. Phys. Lett. 97, (2010).Google Scholar
[20] Peres, N.M.R., Rev. Mod. Phys. 82, 2673 (2010).Google Scholar
[21] Incze, A., Pasturel, A., and Chatillon, C., Appl. Surf. Sci. 177, 226 (2001).Google Scholar
[22] Yu, S.S., Zheng, W.T., and Jiang, Q., IEEE T. Nanotechnol. 7, 628 (2008).Google Scholar