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Transient Response of Amorphous Semiconductor Devices: A Theoretical Microscopic Simulation Approach to the Physics of Disordered Systems

Published online by Cambridge University Press:  26 February 2011

Finley R. Shapiro  and
Yaneer Bar-Yam
Finley R. Shapiro
Affiliation:
Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science and Center for Materials Science and Engineering, Cambridge, MA 02139
Yaneer Bar-Yam
Affiliation:
Materials Research Department, Weizmann Institute, Rehovot, Israel
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Abstract

A general purpose simulator has been developed for transient experiments on amorphous semiconductors. Simulated time-of-flight (TOF) experiments have been used to study the effects of band tails of the form . Values of m from 0.5 to 2.0 are compared to the pure exponential of m = 1.0. Quantitative results demonstrate that dispersive transport as observed in TOF experiments on a-Si:H requires a value of m very close to 1.0.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 531
Copyright
Copyright © Materials Research Society 1988

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References

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