Published online by Cambridge University Press: 26 February 2011
A general purpose simulator has been developed for transient experiments on amorphous semiconductors. Simulated time-of-flight (TOF) experiments have been used to study the effects of band tails of the form . Values of m from 0.5 to 2.0 are compared to the pure exponential of m = 1.0. Quantitative results demonstrate that dispersive transport as observed in TOF experiments on a-Si:H requires a value of m very close to 1.0.