Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-18T12:16:49.005Z Has data issue: false hasContentIssue false
  • English
  • Français

Transient Photoconductivity Study of the Distribution of Gap States in 100°C VHF-deposited Hydrogenated Silicon Layers

Published online by Cambridge University Press:  01 February 2011

Monica Brinza ,
Guy J. Adriaenssens ,
Jatindra K. Rath  and
Ruud E.I. Schropp
Monica Brinza
Affiliation:
[email protected] Utrecht University, Debye Institute of Nanomaterials Science, Department of Physics and Astronomy, SID – Physics of Devices, P.O.Box 80000, Utrecht, 3508 TA, Netherlands
Guy J. Adriaenssens
Affiliation:
[email protected], University of leuven, Halfgeleiderfysica, Celestijnenlaan 200D, Leuven, B-3001, Belgium, 32 16 327 129, 32 16 327 987
Jatindra K. Rath
Affiliation:
[email protected], Utrecht University, Debye Institute of Nanomaterials Science, Department of Physics and Astronomy,, SID - Physics of Devices,, P.O.Box 80000, Utrecht, 3508 TA, Netherlands
Ruud E.I. Schropp
Affiliation:
[email protected], Utrecht University, Debye Institute of Nanomaterials Science, Department of Physics and Astronomy,, SID - Physics of Devices,, P.O.Box 80000, Utrecht, 3508 TA, Netherlands
Get access

Abstract

The energy distribution of gap states has been examined by means of transient photocurrent measurements in a series of 100°C VHF-deposited Si:H samples that spans the amorphous to microcrystalline transition. The ‘amorphous’ distribution, consisting of a continuous background and a prominent dangling-bond-induced peak, remains largely intact across the transition. The transport path located at the conduction band edge in a-Si:H, some 0.63 eV above the dangling bond D− energy, moves down to ∼0.55 eV above the corresponding D− level in the microcrystalline samples.

Keywords

defectsphotoconductivityelectronic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A07-06
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Main, C. Mat. Res. Soc. Symp. Proc. 467, 167 (1997).Google Scholar
[2] Marshall, J.M. and Street, R.A. Solid State Commun. 50, 91 (1984).Google Scholar
[3] Seynhaeve, G. Adriaenssens, G.J. and Michiel, H. Solid State Commun. 56, 323 (1985).Google Scholar
[4] Monroe, D. Solid State Commun. 60, 435 (1986).Google Scholar
[5] Brinza, M. Rath, J.K. and Schropp, R.E.I., Technical Digest of the International PVSEC-17, Fukuoka, Japan, 2007, p1298; to be published in Solar Energy Materials and Solar Cells.Google Scholar
[6] Yan, B. Han, D. and Adriaenssens, G.J. J. Appl. Phys. 79, 3597 (1996).Google Scholar
[7] Sakata, I. Kamei, T. and Yamanaka, M. Phys. Rev. B 76, 075206 (2007).Google Scholar
[8] Hack, M. and Shur, M. J. Appl. Phys. 58, 997 (1985).Google Scholar
[9] Grabtchak, S. Main, C. and Reynolds, S. J. Non-Cryst. Solids 266, 362 (2000).Google Scholar