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Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) Upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction

Published online by Cambridge University Press:  31 January 2011

Anja Hanisch-Blicharski ,
Boris Krenzer ,
Simone Möllenbeck ,
Manuel Ligges ,
Ping Zhou ,
Martin Kammler  and
Michael Horn-von Hoegen
Anja Hanisch-Blicharski
Affiliation:
[email protected], University of Duisburg-Essen, Faculty of Physics, Duisburg, Germany
Boris Krenzer
Affiliation:
[email protected], University of Duisburg-Essen, Faculty of Physics, Duisburg, Germany
Simone Möllenbeck
Affiliation:
[email protected], University of Duisburg-Essen, Faculty of Physics, Duisburg, Germany
Manuel Ligges
Affiliation:
[email protected], University of Duisburg-Essen, Faculty of Physics, Duisburg, Germany
Ping Zhou
Affiliation:
[email protected], University of Duisburg-Essen, Faculty of Physics, Duisburg, Germany
Martin Kammler
Affiliation:
[email protected], University of Duisburg-Essen, Faculty of Physics, Duisburg, Germany
Michael Horn-von Hoegen
Affiliation:
[email protected], University of Duisburg-Essen, Faculty of Physics, Duisburg, Germany
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Abstract

With time resolved ultrafast electron diffraction the cooling process across the interface between a thin film and the underlying substrate was studied after excitation with short laser pulses. From the exponential decay of the surface temperature evolution a thermal boundary conductance of 1430 W/(cm2K) is determined for a 9.7 nm thin Bi(111) film on Si(111). A linear dependence between laser fluence and initial temperature rise was measured for film-thicknesses between 2.5 nm and 34.5 nm. The ratio of initial temperature rise and laser fluence for different film-thicknesses is compared to a model taking multilayer optics into account. The data agree well with this model.

Keywords

Bithermal conductivityRHEED
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1172: Symposium T – Nanoscale Heat Transport–From Fundamentals to Devices , 2009 , 1172-T04-08
Copyright
Copyright © Materials Research Society 2009

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