Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-29T07:30:49.892Z Has data issue: false hasContentIssue false
  • English
  • Français

Transient Behavior of Phoioxcurrent in a-Si :H Solar Cells

Published online by Cambridge University Press:  28 February 2011

Gad Cuang ,
Miao Qing ,
Cao Baocheng ,
Guo Xiaoqin  and
Dai Guocai
Gad Cuang
Affiliation:
Department of Physics, Shandong University, Jinan, China
Miao Qing
Affiliation:
Department of Physics, Shandong University, Jinan, China
Cao Baocheng
Affiliation:
Department of Physics, Shandong University, Jinan, China
Guo Xiaoqin
Affiliation:
Department of Physics, Shandong University, Jinan, China
Dai Guocai
Affiliation:
Department of Physics, Shandong University, Jinan, China
Get access

Abstrct

Time-dependent photocurrent response by the monochromatic square-pulsed excitation light of different wavelenths has been studied on the PIN a-Si:H solar cells. The experiments show that the shape of the photocurrent transient is distinctly changed by varying the photon energy of the excitation light and the applied biases. Our results can be explained by the relaxation of space charge distribution in the i-layer.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 549
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Okamoto, H., Kida, H., Nonomura, S. and Hamakawa, Y., Solar cells 8, 317 (1983)Google Scholar